IGC27T120T8QX1SA1 Discrete Semiconductor Products

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An IGC27T120T8QX1SA1 is a single insulated gate bipolar transistor (IGBT) device. It is a part of the IGBT family of transistors. IGBTs, first developed in 1976, are a type of switching transistor used for power control and switching applications in medium and high-voltage circuits. The IGC27T120T8QX1SA1 device is a low-voltage IGBT that operates at a maximum voltage of 600V and a maximum current of 25A.

IGBTs combine the advantages of both bipolar transistors and MOSFETs. Like MOSFETs, IGBTs can be made with low ‘on’ resistance allowing them to switch high current without becoming overly hot. They can also work at high frequency, which makes them ideal for power switching applications. Like bipolar transistors, they are voltage driven, meaning they can be used to control high voltage and current applications more easily.

The IGC27T120T8QX1SA1 is specifically designed for low-voltage, power control applications. It is configured with a blocking diode to control current and voltage. The diode acts as a reverse current limit, eliminating the need for additional components. Additionally, the IGC27T120T8QX1SA1 includes an integrated temperature sensing device (ITS) to detect over-temperature. For extra protection, it is also packaged in a heat resistant glass/ceramic package. These features make the IGC27T120T8QX1SA1 well suited for automotive applications such as load control, motor control and power switching.

The IGC27T120T8QX1SA1 is a voltage-driven device that is equipped with either a reverse voltage (reverse-biased junction) or a forward current (forward biased junction). When a signal is applied to the gate, the junction between the collector and emitter changes, allowing current to flow into the collector and out of the emitter, which is known as the ‘on’ state. When the signal is removed, the junction returns to its original state and the transistor is ‘off’. This ‘on/off’ control of the device makes it useful in a variety of power applications.

The IGC27T120T8QX1SA1 is a single IGBT transistor of the IGBT family. It is designed for power control and switching applications at low voltages, up to a maximum of 600V and a maximum current of 25A. The device includes a blocking diode for current limiting along with an integrated temperature sensing device for over-temperature protection. It is well suited for automotive applications like load control, motor control and power switching.

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