IGD01N120H2BUMA1

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The IGD01N120H2BUMA1 is a robust, high performance Insulated Gate Bipolar Transistor (IGBT). This device is classified as a Single IGBT and is predominantly used in high power electronics applications. In general, IGBTs are used in applications such as motor control, renewable energy power conversion, and power conversion and management systems.

TheIGD01N120H2BUMA1 has adevice size of2.20 × 1.20 mm and a rated collector-emitter voltageof1000 V.Other features include a rated current of 12 A and a turn-on voltage of 4 V. It has a low gate charge of7.6 nCmaking it a low loss device. Inaddition, it has a fast switching speed of 10 ns,which makes it suitable for applications where fast switching is required. This device also has a high frequency of 100 kHz.

The working principle of theIGD01N120H2BUMAL revolves around the fact that each IGBT is essentially a combination of an N-channel MOSFET and a PNP bipolar transistor. When the gate of the IGBT is biased with a suitable current, the internal PNP transistor is activated, allowing current to flow from the collector to the emitter. This is known as the “on” state. When the gate current is reversed, the internal PNP transistor is deactivated, and current flow stops. This is known as the “off” state. Hence, the IGBT acts as a switch, allowing current to flow in one direction when the switch is on, and blocking current flow in the other direction when the switch is off.

TheIGD01N120H2BUMA1 IGBT is primarily used in power electronics applications. It is typically used in AC-DC and DC-AC power conversion, renewable energy power conversion, motor control, and power conversion and management systems. It is used in high power applications such as induction heating, lasers and welding. It is also used in power supplies, UPS power supplies and other power management systems. In addition, theIGD01N120H2BUMA1 IGBT is used in automotive and aerospace applications, where it is used for power switching and motor control. Finally, it is also used in communication systems, where it is used for power conversion and power management.

In conclusion, theIGD01N120H2BUMA1 IGBT is a robust, high performance transistorsused widely in power electronics applications. It has a device size of 2.20 × 1.20 mm, a rated collector-emitter voltage of 1000 V and a rated current of 12 A. It has a low gate charge of 7.6 nC and a fast switching speed of 10 ns. Its main applications include AC-DC and DC-AC power conversion, motor control applications, power conversion and management systems, induction heating and laser technology. Furthermore, theIGD01N120H2BUMA1 is used in various automotive and aerospace applications.

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