IGD06N60TATMA1 Discrete Semiconductor Products |
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| Allicdata Part #: | IGD06N60TATMA1TR-ND |
| Manufacturer Part#: |
IGD06N60TATMA1 |
| Price: | $ 0.30 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 600V 12A 88W TO252-3 |
| More Detail: | IGBT Trench Field Stop 600V 12A 88W Surface Mount ... |
| DataSheet: |  IGD06N60TATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 2500 +: | $ 0.27477 |
| Power - Max: | 88W |
| Base Part Number: | *GD06N60 |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Test Condition: | 400V, 6A, 23 Ohm, 15V |
| Td (on/off) @ 25°C: | 9ns/130ns |
| Gate Charge: | 42nC |
| Input Type: | Standard |
| Switching Energy: | 200µJ |
| Series: | TrenchStop® |
| Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 6A |
| Current - Collector Pulsed (Icm): | 18A |
| Current - Collector (Ic) (Max): | 12A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | Trench Field Stop |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tape & Reel (TR) |
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The IGD06N60TATMA1 is a single insulated gate bipolar transistor (IGBT). An IGBT is a type of bipolar transistor that operates as power switch applications. It has a high input impedance, wide frequency range, wide voltage range and can operate at high frequencies. It is also highly temperature-resistant and has a low on-state resistance.
The IGD06N60TATMA1 is an optimal choice for energy-efficient power switching. It is designed to handle high power levels in medium and high-frequency applications and can be used in full or half bridge applications. It is optimized for motor drive inverter operation, has high efficiency and fast switching characteristics. It can also be used for other high-power switching applications such as motor drive controllers, AC power switching, and lighting.
The working principle of the IGD06N60TATMA1 is relatively simple. The device consists of an N-type substrate and a P-type layer. The substrate is made from semiconductor material and the P-type layer contains many perpendicular channels of electrons. The operation of the device depends on the gate voltage. When gate voltage is applied to the N-type substrate, a strong electric field is created, which causes the P-type channels of electrons to move forward into the N-type substrate. This creates a current between the source and drain terminals of the device, which allows electrical current to flow.
The IGD06N60TATMA1 is a great device for a variety of power switching applications due to its high efficiency and fast switching characteristics. It is optimized for use in distribution, conversion and control applications such as motor drive inverters, AC power switching, and lighting, and is capable of efficiently handling high power levels in medium and high-frequency ranges.
The specific data is subject to PDF, and the above content is for reference
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