IGP03N120H2XKSA1

Switching Energy:	290µJ
Supplier Device Package:	PG-TO220-3
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Test Condition:	800V, 3A, 82 Ohm, 15V
Td (on/off) @ 25°C:	9.2ns/281ns
Gate Charge:	22nC
Input Type:	Standard
Series:	--
Power - Max:	62.5W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 3A
Current - Collector Pulsed (Icm):	9.9A
Current - Collector (Ic) (Max):	9.6A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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IGP03N120H2XKSA1 Application Field and Working Principle

The IGP03N120H2XKSA1 is a type of insulated-gate bipolar transistor (IGBT) used in power electronics applications that require high efficiency, reliability and low maintenance. This type of IGBT is especially suitable for high-performance motor drives, power conversion, lighting control and frequency control applications. Its features and wide range of application let it to become a popular option for medium- to high-power applications.

Type and Rating of IGP03N120H2XKSA1

The IGP03N120H2XKSA1 is a 1200V, 30A/60A IGBT module that offers several benefits over other types of IGBTs, including low on-state voltage drop and low gate charge. It has a low saturation voltage and both soft and short circuit turn-off capability. It is available in surface mount, through hole and module format.

Application Field of IGP03N120H2XKSA1

The IGP03N120H2XKSA1 is used in a wide range of applications that require medium to high power switching, such as electric power line, DC-AC and AC-DC inverters, UPS, solar inverter, AC motor drives, lighting control, and frequency control. It is also suitable for residential, commercial and industrial applications.

Working Principle of IGP03N120H2XKSA1

The IGP03N120H2XKSA1 is a type of IGBT that combines the advantages of a standard MOSFET and a bipolar transistor. Like the MOSFET, it features a lower on-state voltage drop and low gate charge, making it highly efficient when compared to other types of transistors. However, unlike the MOSFET, it features a low saturation voltage so its switching losses are relatively low.The IGP03N120H2XKSA1 utilizes a two-terminal gate structure to control the amount of current flowing between the collector and the emitter terminals. When a voltage is applied to the gate, the gate-to-emitter capacitance is charged and then turns the IGBT on. The gate voltage controls the width of the base-emitter junction, which results to the current flowing through the gate-collector junction. When the gate voltage is removed, the IGBT turns off. The IGP03N120H2XKSA1 also offers several protection features, including overcurrent protection and thermal shutdown. When the IGP03N120H2XKSA1 is exposed to an overcurrent, the current will be limited to the rated current and the IGBT will be shut down. Its wide operating temperature range and its high tolerance to temperature fluctuations make it an ideal choice for applications that require reliable, long-term operation.

Benefits of IGP03N120H2XKSA1

The IGP03N120H2XKSA1 offers many benefits over other types of IGBTs, including improved power efficiency and better power cycling capabilities. Its wide operating temperature range, low switching losses, and low on-state voltage drop make it a popular choice for high-power applications. Furthermore, it features several protection features, making it ideal for applications that require reliable operation over long periods of time. In conclusion, the IGP03N120H2XKSA1 is a powerful and reliable IGBT that is suitable for a wide range of applications. It is ideal for medium to high-power applications that require high efficiency and reliability. Its benefits and features make it a popular choice for power electronics applications.

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