Allicdata Part #: | IGP06N60TXKSA1-ND |
Manufacturer Part#: |
IGP06N60TXKSA1 |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 12A 88W TO220-3 |
More Detail: | IGBT Trench Field Stop 600V 12A 88W Through Hole P... |
DataSheet: | IGP06N60TXKSA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
500 +: | $ 0.52022 |
Power - Max: | 88W |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 6A, 23 Ohm, 15V |
Td (on/off) @ 25°C: | 9ns/130ns |
Gate Charge: | 42nC |
Input Type: | Standard |
Switching Energy: | 200µJ |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 6A |
Current - Collector Pulsed (Icm): | 18A |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGP06N60TXKSA1 application field and working principle
Transistors - IGBTs - Single technology has been used to create a number of transistors, but the IGP06N60TXKSA1 is a type of insulated gate bipolar transistor. Specifically, it is a STMicroelectronics device that is a high-voltage, high-current device, making it especially well-suited for motor drive and welding applications, as well as for solar conversion. The IGP06N60TXKSA1 comes with an insulated gate and a N-channel, making it able to achieve solidly fast switching speeds.
Working principle
Insulated gate bipolar transistors work by using two separate transistors – NG and PG – working together. The gate is the switch that is attached, controlled by the voltage that is applied externally. Here, it is connected to the N-channel which is a bipolar junction transistor (BJT), while the PG is a Darlington transistor. The two transistors are connected in series to form a parallel circuit and thus create the IGP06N60TXKSA1. The switching of the circuit is possible by reconstructing the current-voltage across the terminals in the circuit.
When applying a voltage to the base of the IGP06N60TXKSA1, the base-emitter junction of the N-channel BJT becomes forward biased, which causes holes to be injected into the collector-base junction and decreases the resistance between the collector and the emitter. This activates the Darlington transistor, which ends up lower the voltage across the collector-emitter junction and thus switch the IGP06N60TXKSA1 current to zero.
Application fields
The IGP06N60TXKSA1 device is a high-voltage, high-current device, which makes it suitable for conducting a wide range of electrical currents and specific applications. Generally, this type of IGBT can be used in applications involving solar energy conversion, motor drive and high-frequency switching. It can also be used in welding applications, as well as other applications that require high power outputs.
In motor drive applications, the IGP06N60TXKSA1 works by providing the high current that is needed to power a motor. This type of IGBT is also used in inverter applications, where it is employed to control the inverter’s output voltage. The IGP06N60TXKSA1 is also used in welding applications, as it is able to switch the current on and off rapidly, and can also handle high currents. Finally, it can be used in solar energy conversion applications, where it can be used to quickly and efficiently convert solar energy into an electrical current.
In conclusion, the IGP06N60TXKSA1 insulated gate bipolar transistor is a high-voltage, high-current device, which makes it especially well-suited for motor drive and welding applications, as well as for solar conversion. It works by using two separate transistors, the NG and PG, which are connected in series to form a parallel circuit. This device is also suitable for applications involving solar energy conversion, motor drive, and high-frequency switching.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IGP06N60TXKSA1 | Infineon Tec... | 0.57 $ | 1000 | IGBT 600V 12A 88W TO220-3... |
IGP01N120H2XKSA1 | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 3.2A 28W TO220... |
IGP03N120H2XKSA1 | Infineon Tec... | 0.0 $ | 1000 | IGBT 1200V 9.6A 62.5W TO2... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT