IGP20N60H3XKSA1

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IGP20N60H3XKSA1 is a single short-circuit-rating, low loss, fast switching, and IGBT module by Infineon. It features high power and current density, low losses, and short circuit capability, which makes it suitable especially for automotive applications such as powertrain inverters and DC/DC converters. The device has low switching losses and 20A/56V blocking voltage capability. IGP20N60H3XKSA1 is a very efficient device for high frequency applications.

The IGP20N60H3XKSA1 device is made up of an IGBT chip, a diode chip, a Fast Recovery Free Wheeling diode, and several passive elements, including gate resistors. All these components are integrated into a single monolithic package. The integrated G-S limiter and the fast diode help maintain the efficiency of power conversion applications and provide protection from Electro Magnetic Interference (EMI). Its reverse polarity protection and undervoltage protection also ensure the reliable operation.

The IGP20N60H3XKSA1 device is based on the Infineon’s patented trench technology. The design of the device features a very low on-state resistance, which helps reduce the losses and minimize the switching losses even at very high frequencies. Additionally, the device can be operated at high Pulsed Currents, making it ideal for applications like Inverters and converter applications, where current demands can vary widely.

In terms of its application fields, IGP20N60H3XKSA1 is mainly used for powertrain inverters and DC/DC converters where a high current density is needed, such as motor control and electric power storage in automotive systems. It can also be used in other circuit topologies, such as AC/AC converters and UPS applications, along with arc furnace applications.

The working principle of IGP20N60H3XKSA1 is fairly simple. The device works with three basic elements, the IGBT chip, the diode chip, and the passive elements. When the control signal is applied to the gate, the IGBT turns on and current flows through the IGBT chip and diode chip. The passive components help reduce switching losses, and enable reverse polarity protection and undervoltage protection. The short-circuit capability and low on-state resistance make the device suitable for high power conversion applications.

In conclusion, IGP20N60H3XKSA1 is a single IGBT module from Infineon Technologies. The device is highly reliable and offers high current density and low switching losses, making it suitable for high power conversion applications. The device can be used for powertrain inverters and DC/DC converters, as well as motor control, electric power storage and UPS applications. The working principle of the device is based on the Infineon’s patented trench technology and the combination of an IGBT chip, a diode chip, and several passive components.

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