IGP20N65F5XKSA1 Discrete Semiconductor Products

Power - Max:	125W
Supplier Device Package:	PG-TO-220-3
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	400V, 10A, 32 Ohm, 15V
Td (on/off) @ 25°C:	20ns/165ns
Gate Charge:	48nC
Input Type:	Standard
Switching Energy:	160µJ (on), 60µJ (off)
Series:	TrenchStop™
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 20A
Current - Collector Pulsed (Icm):	60A
Current - Collector (Ic) (Max):	42A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IGP20N65F5XKSA1 - Transistors - IGBTs - Single

An Insulated Gate Bipolar Transistor (IGBT) is an electronic component used to create a current between two terminals in an electrical circuit. The IGP20N65F5XKSA1 is a single-channel IGBT device manufactured by Renesas Electronics Corporation, a leading manufacturer of semiconductors. This component is commonly used in a variety of applications in industrial, automotive, and consumer electronics.The IGP20N65F5XKSA1 is a three-terminal, high-power switch that is capable of controlling large currents and voltage. It is an ideal device for high-power applications where reliability and efficiency are of utmost importance. The IGP20N65F5XKSA1 is designed to offer excellent switching performance with low EMI, low power consumption, and low heat generation.The working principle of the IGP20N65F5XKSA1 is based on the principle of direct current (DC) voltage control. The IGP20N65F5XKSA1 is designed to control the current between the source and drain terminals by controlling the gate voltage. When the gate voltage is increased, the current between the source and drain will also increase. When the gate voltage is decreased, the current between the source and drain will decrease.The IGP20N65F5XKSA1 is typically used for high-power switching applications. It can be used to switch large AC or DC currents, including those used in motor control, power supplies, and HVAC systems. It is also commonly used in LED lighting systems, renewable energy systems, and motor drives.The IGP20N65F5XKSA1 has many advantages over traditional switch solutions, such as increased efficiency and improved reliability. The IGP20N65F5XKSA1 is designed to provide superior power efficiency, reduce power dissipation, and improve switch life expectancy. This makes it especially suitable for use in high-power applications.In addition to its high switching power, the IGP20N65F5XKSA1 also offers other features that make it an ideal choice for high-power applications. Its low on-state voltage drop and low gate charge provide improved system efficiency. Its high maximum junction temperature rating, overvoltage capability, and fast switching speed also make it an attractive option for high-power applications.The IGP20N65F5XKSA1 is widely available in a variety of packages, making it easy to find the right product for your application. It can be used in a single-channel application or in a parallel configuration for high-current applications. It is also available in a variety of voltages, currents, and other operating parameters to match specific applications.In conclusion, the IGP20N65F5XKSA1 is a highly reliable and efficient IGBT device designed for use in high-power applications. Its fast switching speed, low on-state voltage drop, and high maximum junction temperature rating make it an ideal choice for a variety of industrial, automotive, and consumer electronics applications.

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