IGW75N60H3FKSA1

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Infineon\'s IGBT, the IGW75N60H3FKSA1, is a high voltage, high current, and high speed insulated gate bipolar transistor (IGBT). As a part of the Infineon OptiMOS™ family, IGW75N60H3FKSA1 excels in a wide range of power applications, offering superior performance and reliability. In this article, we will explore the applications and working principles of this device, and how it benefits a variety of industries.

Application Field

The IGW75N60H3FKSA1 is a high voltage, high current, and high speed IGBT, making it ideal for a variety of power applications. It is great for switching power supplies and can be used in high frequency applications such as motor drives and uninterruptible power supplies (UPSs). It can also be used in high power inverters and other power converters, such as Solar inverters, AC/DC and DC/DC applications.

The IGW75N60H3FKSA1 is also great for industrial automation and process control. It is perfect for applications where energy efficiency, performance and reliability are a priority. It can also be used in automotive applications such as high voltage power rails and regenerative braking systems.

Working Principle

The IGW75N60H3FKSA1 is an insulated gate bipolar transistor (IGBT). It is a three-terminal diode-like photovoltaic (PV) device which combines the elements of a MOSFET and a bipolar transistor in a single unit. It has a gate-collector voltage of 650V, and a breakdown voltage of 600V.

The IGW75N60H3FKSA1 works by using a current flow between the collector and emitter, which is then controlled by the current flow from the gate. When the MOSFET is not conducting, the voltage drop from collector to source is very low. When a positive gate-source voltage is applied, it turns the transistor on, allowing current to flow from the collector to the emitter. By controlling the gate-source voltage, the current flow can be accurately controlled as well.

The IGW75N60H3FKSA1 is ideal in applications where power losses are critical. It has an avalanche energy rating of 200mJ, and can handle peak current of up to 75A. It is also suitable for low-side and high-side switching.

Conclusion

The IGW75N60H3FKSA1 is a high voltage, high current, and high speed IGBT from Infineon’s OptiMOS family. It is perfect for a variety of power application, offering superior performance and reliability in automation and process control, solar inverters, high frequency motor drives, and more. Its three-terminal diode-like photovoltaic (PV) construction allows it to control current and voltage with accuracy, and its power losses are very low due to its high avalanche energy rating and peak current rating.

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