IGW75N65H5XKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IGW75N65H5XKSA1-ND |
Manufacturer Part#: |
IGW75N65H5XKSA1 |
Price: | $ 3.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT TRENCH 650V 120A TO247-3 |
More Detail: | IGBT Trench 650V 120A 395W Through Hole PG-TO247-3 |
DataSheet: | IGW75N65H5XKSA1 Datasheet/PDF |
Quantity: | 119 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 3.14370 |
10 +: | $ 2.82618 |
100 +: | $ 2.31557 |
500 +: | $ 1.97118 |
1000 +: | $ 1.66244 |
Series: | TrenchStop™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 120A |
Current - Collector Pulsed (Icm): | 300A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
Power - Max: | 395W |
Switching Energy: | 2.25mJ (on), 950µJ (off) |
Input Type: | Standard |
Gate Charge: | 160nC |
Td (on/off) @ 25°C: | 28ns/174ns |
Test Condition: | 400V, 75A, 8 Ohm, 15V |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IGW75N65H5XKSA1 is classified as an Insulated Gate Bipolar Transistor, or IGBT. It is a single transistor type and is commonly used in many industrial, commercial and consumer electronic applications. The IGW75N65H5XKSA1 has a maximum voltage rating of 600V with a high current gain ratio and low on-state resistance. It also features a soft-saturation design to ensure that switching operations remain efficient.
Application Field
The IGW75N65H5XKSA1 is primarily used in applications where high power needs to be generated from a low-voltage supply. It has a wide range of applications in various industries, including solar power, lighting control systems, electrical power supplies, and electronic ballasts. It is also used in automotive, inverter and motor control systems as well as in AC motor drives and LED lighting systems.
This IGBT is also used in a variety of smart home and home automation applications, such as lighting and appliance control. It is also commonly used in industrial motor controllers, motion control, and power distribution systems. Its high current and voltage capabilities make it ideal for high-power applications.
Working Principle
An IGB is a three-terminal device, with a gate, collector and emitter. The IGW75N65H5XKSA1 transistor is operated using the same principle as a conventional BJT or a MOSFET. When a positive voltage is applied to the gate, it induces a drain-to-source current, turning on the transistor. This current can then be used to control the device and other components in the circuit. As the gate voltage is increased, the drain-to-source current also increases, allowing the transistor to support higher currents in the circuit.
The IGW75N65H5XKSA1 is also equipped with built-in protection features, such as temperature protection and over-voltage protection. These protection features ensure that the device functions properly even in extreme temperatures or high voltages.
The IGW75N65H5XKSA1 is a versatile, robust and powerful device that can be used in a variety of applications. Its high current and voltage ratings make it an ideal choice for powering high-power components in a wide range of applications. Its built-in protection features also ensure that the device remains reliable even during periods of extreme temperatures or high voltages. The IGW75N65H5XKSA1 is a powerful and versatile device that has been designed to meet the needs of a wide range of applications and power needs.
The specific data is subject to PDF, and the above content is for reference
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