IHW30N100R

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The International Rectifier’s IHW30N100R is a high-voltage insulated gate bipolar transistor (IGBT). This type of transistor is a primitive of the Discrete Insulated Gate Bipolar Transistor (DiGBT) family, and is developed to provide a stable and reliable power switch component. Also, due to its simplified design, it occupies small space and uses low cost materials. IHW30N100R’s provide high efficiency, low gate charge and low gate input power to the user. Additionally, it has dynamic dV/dt and di/dt capabilities and built-in degauss diodes.

IHW30N100R has varied application fields. As a high-voltage IGBT, it is mostly used in motor drives and switch mode power supplies as it provides higher speed switching, allowing for smaller components and enabling faster turn-off and improved power density. Moreover, it can also be used in controlling light sources such as LEDs, and implementations in renewable energy sources such as solar, wind, hydro and geothermal.

When understanding the working principle of IHW30N100R, it is important to gain an understanding of the underlying science and technology. To begin, the voltage application leads to current flow when IHW30N100R is in its on-state. The turn-off process is controlled by the gate-cathode voltage and the current flow through the IGBT can be controlled by limiting the allowable current density. Control of the device is realized by controlling the gate-emitter voltage, which is applied by a resistor or an external driver.

The IHW30N100R has a voltage gain between the collector and the emitter, while its current gain is almost constant. Both the voltage and current gains creates an amplification effect at the turn-on and turn-off times. When the gate-emitter voltage is higher than a specific threshold voltage, the device will be electrically conducting. That happens when the IHW30N100R is in its on state, and a reverse direction current is created between the collector and the emitter. This current, together with the forward current through the device, results in a voltage drop in the device. Similarly, the device turns-off when gate-emitter voltage is lower than the threshold voltage and the reverse current decreases.

The IHW30N100R is designed with the latest technology, offering superior performance in noise immunity, thermal stability, and high switching speeds. It is a single IGBT with a reverse body diode built-in, offering a simplified circuit design and making the device suitable for various applications. Additionally, the diode allows for snubbing of higher order harmonic signals. And its highly rugged design gives the IHW30N100R the ability to handle higher voltages and higher pulse currents.

The IHW30N100R is a discrete IGBT belonging to the Single IGBT family. IHW30N100R is a high-power and high-voltage IGBT with excellent performance and reliability. It is suitable for controlling various loads, and has applications in motor drives, switch mode power supplies, and renewable energy systems. Its simplified design eliminates the need for additional components and its high switching speeds, low gate charge, low gate input power, and wide operating temperature range makes it a valuable device in different applications.

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