
Allicdata Part #: | IHW30N120R3FKSA1-ND |
Manufacturer Part#: |
IHW30N120R3FKSA1 |
Price: | $ 3.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 60A 349W TO247-3 |
More Detail: | IGBT 1200V 60A 349W Through Hole TO-247-3 |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 3.05550 |
10 +: | $ 2.74428 |
100 +: | $ 2.24834 |
500 +: | $ 1.91397 |
1000 +: | $ 1.61419 |
Power - Max: | 349W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 600V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | -/326ns |
Gate Charge: | 263nC |
Input Type: | Standard |
Switching Energy: | 1.47mJ (off) |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 1.75V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 90A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IHW30N120R3FKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT). It is designed to be used in a wide variety of applications, ranging from industrial inverters to solar panels, battery chargers, motor drives, power converters, and other applications in which high performance and efficient switching is required. Its robust construction and excellent thermal properties make it ideal for use in high power applications.
The IHW30N120R3FKSA1 is a single IGBT that provides excellent switching performance. It features a low on-state voltage drop, low gate charge, and high peak current ratings, making it highly efficient in most applications. It also has low turn-on and turn-off gate losses, allowing for faster switching speeds and more efficient operation. The IHW30N120R3FKSA1 is capable of operating at frequencies up to 10 kHz, making it ideal for high-frequency vector control applications.
The IHW30N120R3FKSA1 is a high-current, low voltage IGBT. It is capable of switching up to 600A with a VCEsat of 3V and a gate to emitter leakage current of 30μA. It has both a soft-spike output, which makes it suitable for Heavy Duty applications, and a fast soft-recovery output suited for more sensitive applications. It also has an integral EMI suppression circuit, which further improves its performance and usability.
The IHW30N120R3FKSA1 works on the principle of “resistance-capacitance”. When the gate voltage is applied, electrons in the junction between the gate and the source are polarized and move to the base of the transistor. This builds a junction depletion region leading to resistance-capacitance to turn the device on. The voltage drop across the device is due to the accumulation of electrons that cause the “on” state. When the gate voltage is removed, the resistance-capacitance decreases and the transistor turns off.
The IHW30N120R3FKSA1 is an ideal device for many applications that require robust switching performance, high frequency switching capabilities, low voltage drops, high current ratings, and superior thermal efficiency. Applications such as solar inverters, renewable energy, motor control, and other power control applications will all benefit from the IHW30N120R3FKSA1’s great performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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