IHW30N120R3FKSA1 Allicdata Electronics
Allicdata Part #:

IHW30N120R3FKSA1-ND

Manufacturer Part#:

IHW30N120R3FKSA1

Price: $ 3.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 60A 349W TO247-3
More Detail: IGBT 1200V 60A 349W Through Hole TO-247-3
DataSheet: IHW30N120R3FKSA1 datasheetIHW30N120R3FKSA1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 3.05550
10 +: $ 2.74428
100 +: $ 2.24834
500 +: $ 1.91397
1000 +: $ 1.61419
Stock 1000Can Ship Immediately
$ 3.37
Specifications
Power - Max: 349W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/326ns
Gate Charge: 263nC
Input Type: Standard
Switching Energy: 1.47mJ (off)
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Current - Collector Pulsed (Icm): 90A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IHW30N120R3FKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT). It is designed to be used in a wide variety of applications, ranging from industrial inverters to solar panels, battery chargers, motor drives, power converters, and other applications in which high performance and efficient switching is required. Its robust construction and excellent thermal properties make it ideal for use in high power applications.

The IHW30N120R3FKSA1 is a single IGBT that provides excellent switching performance. It features a low on-state voltage drop, low gate charge, and high peak current ratings, making it highly efficient in most applications. It also has low turn-on and turn-off gate losses, allowing for faster switching speeds and more efficient operation. The IHW30N120R3FKSA1 is capable of operating at frequencies up to 10 kHz, making it ideal for high-frequency vector control applications.

The IHW30N120R3FKSA1 is a high-current, low voltage IGBT. It is capable of switching up to 600A with a VCEsat of 3V and a gate to emitter leakage current of 30μA. It has both a soft-spike output, which makes it suitable for Heavy Duty applications, and a fast soft-recovery output suited for more sensitive applications. It also has an integral EMI suppression circuit, which further improves its performance and usability.

The IHW30N120R3FKSA1 works on the principle of “resistance-capacitance”. When the gate voltage is applied, electrons in the junction between the gate and the source are polarized and move to the base of the transistor. This builds a junction depletion region leading to resistance-capacitance to turn the device on. The voltage drop across the device is due to the accumulation of electrons that cause the “on” state. When the gate voltage is removed, the resistance-capacitance decreases and the transistor turns off.

The IHW30N120R3FKSA1 is an ideal device for many applications that require robust switching performance, high frequency switching capabilities, low voltage drops, high current ratings, and superior thermal efficiency. Applications such as solar inverters, renewable energy, motor control, and other power control applications will all benefit from the IHW30N120R3FKSA1’s great performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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