Allicdata Part #: | IJW120R100T1FKSA1-ND |
Manufacturer Part#: |
IJW120R100T1FKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | JFET N-CHAN 26A TO247-3 |
More Detail: | JFET N-Channel 26A 190W Through Hole PG-TO247-3 |
DataSheet: | IJW120R100T1FKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 1200V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1.5µA @ 1200V |
Current Drain (Id) - Max: | 26A |
Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 19.5V (VGS) |
Resistance - RDS(On): | 100 mOhms |
Power - Max: | 190W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
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The IJW120R100T1FKSA1 is a type of JFET, or junction field-effect transistor. It is a four terminal unipolar semiconductor device, with three key components: the gate, the source and the drain. The function of the JFET is to control current by use of an electric field, in order to receive and amplify signals. The IJW120R100T1FKSA1, designed and manufactured by Intersil, is an enhancement mode device with an abundant number of applications, from low-level preamplifier circuits, digital interfacing and communications.
The IJW120R100T1FKSA1 is a depletion mode device, meaning it carries a negative voltage on the gate of the transistor to control the current that flows through the source to the drain. When a negative voltage is applied, the electron current is blocked, thus preventing current flow. To activate the IJW120R100T1FKSA1 the voltage must be reversed, so the gate acts like a switch and not a regulator, opening up the path between source and drain to allow current to flow.
Depletion mode JFETs can be used in a variety of applications, from audio amplifiers to digital logic gates. It is also used in instrumentation, where it is suited to amplifier stage circuits as a voltage controlled resistor. The IJW120R100T1FKSA1 is widelu used in power supplies and other power control applications, where it can be used as a low on-resistance with minimal current capacity.
The IJW120R100T1FKSA1 is also a popular choice for small amplifier circuits, where its enhanced gate current makes it ideal for low voltage applications. Because it does not require bias currents, it is suitable for applications like oscillators and instrument amplifiers. The device is also popularly used in RF and microwave amplifiers, due to its excellent frequency regulating characteristics, as well as being a key component in active filter circuits.
The IJW120R100T1FKSA1\'s working principle is based upon the behavior of electrons when a voltage is applied to its gate. This voltage creates an electric field, which attracts and repulses electrons, regulating the current flow through the device. When the voltage is reversed, the electrons are attracted to the gate, allowing the current to flow. This principle of operation enables the IJW120R100T1FKSA1 to be used for a wide range of applications.
The IJW120R100T1FKSA1 is a versatile and reliable device, with an extremely low leakage current. It has an excellent dynamic range with a low noise level, making it an ideal choice for a range of applications. Its wide operating temperature range and low voltage threshold make the device suitable for a diverse range of applications, from power control to audio amplifiers. Its superior gate current capability enables it to be used for low voltage applications, and its performance makes it a preferred choice for radio frequency and microwave applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IJW120R070T1FKSA1 | Infineon Tec... | 0.0 $ | 1000 | JFET N-CHAN 35A TO247-3JF... |
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