IKA08N65F5XKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKA08N65F5XKSA1-ND |
Manufacturer Part#: |
IKA08N65F5XKSA1 |
Price: | $ 1.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 10.8A 31.2W TO220-3 |
More Detail: | IGBT 650V 10.8A 31.2W Through Hole PG-TO-220-3 |
DataSheet: | IKA08N65F5XKSA1 Datasheet/PDF |
Quantity: | 418 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.12770 |
10 +: | $ 1.01367 |
100 +: | $ 0.81465 |
500 +: | $ 0.66934 |
1000 +: | $ 0.55460 |
Power - Max: | 31.2W |
Supplier Device Package: | PG-TO-220-3 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 41ns |
Test Condition: | 400V, 4A, 48 Ohm, 15V |
Td (on/off) @ 25°C: | 10ns/116ns |
Gate Charge: | 22nC |
Input Type: | Standard |
Switching Energy: | 70µJ (on), 20µJ (off) |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 8A |
Current - Collector Pulsed (Icm): | 24A |
Current - Collector (Ic) (Max): | 10.8A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKA08N65F5XKSA1 is an insulated gate bipolar transistor (IGBT) used in a wide variety of applications. The device is widely used in power electronics applications, particularly in the automotive sector, due to its robust nature and response times. It can also be used in industrial and consumer applications, ranging from lighting and motor control, to switched impedance circuits.
The IKA08N65F5XKSA1 is a three terminal device comprised of an N-channel FET and a PNP bipolar junction transistor (BJT). The N-channel FET acts as a switch that passes current through the device when it is activated by a gate voltage. The PNP BJT acts as an amplifier, allowing direct control over the current flow through the device. This combined action of both components makes the device unique, and allows it to switch larger currents with higher efficiency than traditional transistors.
The device can be used as either a switch or a linear regulator depending on the associated circuitry. When used as a switch, the device is activated with a gate voltage that turns on the FET gate and allows current flow through the device. With the FET gate on, the base of the BJT is activated, allowing amplified higher current flow from its collector to its emitter. This ability to switch large currents with very low on-state losses is the main advantage of the IKA08N65F5XKSA1.
When used as a linear regulator, the FET gate is activated with a small gate voltage, and the BJT is used for linear control. The BJT base voltage is used to control the collector/emitter current, with a small amount of feedback used to regulate the emitter/collector voltage. This type of linear control provides excellent accuracy and stability, making it ideal for voltage regulation and power supply applications.
In addition to its switch mode and linear regulation capability, the IKA08N65F5XKSA1 has a variety of control features such as over-current, over-temperature and under-voltage protection. This makes it a robust device, able to operate in a wide range of operating environments. It is also suitable for a wide range of operating frequencies, making it suitable for many high-frequency switching converters.
The IKA08N65F5XKSA1 is a robust, versatile and cost effective solution for a range of power applications. Its fast switching response and low on-state losses make it ideal for power switching applications. Its linear regulation capabilities and range of protection features make it suitable for a variety of industrial and consumer applications. This makes it a popular choice for designers looking for an integrated power solution.
The specific data is subject to PDF, and the above content is for reference
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