IKA08N65H5XKSA1 Allicdata Electronics

IKA08N65H5XKSA1 Discrete Semiconductor Products

Allicdata Part #:

IKA08N65H5XKSA1-ND

Manufacturer Part#:

IKA08N65H5XKSA1

Price: $ 1.38
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 650V 10.8A 31.2W PG-TO220-3
More Detail: IGBT 650V 10.8A 31.2W Through Hole TO-220-3
DataSheet: IKA08N65H5XKSA1 datasheetIKA08N65H5XKSA1 Datasheet/PDF
Quantity: 400
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.25370
10 +: $ 1.12581
100 +: $ 0.90512
500 +: $ 0.74367
1000 +: $ 0.61617
Stock 400Can Ship Immediately
$ 1.38
Specifications
Power - Max: 31.2W
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 40ns
Test Condition: 400V, 4A, 48 Ohm, 15V
Td (on/off) @ 25°C: 11ns/115ns
Gate Charge: 22nC
Input Type: Standard
Switching Energy: 70µJ (on), 30µJ (off)
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Current - Collector Pulsed (Icm): 24A
Current - Collector (Ic) (Max): 10.8A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IKA08N65H5XKSA1 is a single IGBT transistor. It belongs to the class of Insulated Gate Bipolar Transistors (IGBTs). IGBTs are used in various applications where efficient switching, power control, and fast switching speed are essential. This type of transistor combines the best of both bipolar junction transistors (BJT) and metal oxide semiconductor field effect transistors (MOSFET), making them highly suitable for many different applications.

The IKA08N65H5XKSA1 is a high power, fast switching IGBT. It is capable of handling a full-rated Collector Current up to 8A and is designed to handle a peak output current up to 34A. This makes it well-suited for high-power applications such as motor control, inverters, and servo control. Additionally, the IKA08N65H5XKSA1 has a low gate trigger current and fast switching speed, making it ideal for high frequency applications.

The IKA08N65H5XKSA1 offers superior performance over other similar transistors due to its low gate threshold and on-state resistance. It is manufactured using advanced technology, which results in a highly reliable, durable product. Additionally, because it is highly insulated, it can safely be used in industrial, automotive and telecommunications applications.

The working principle of the IKA08N65H5XKSA1 is quite simple. When the gate voltage is increased, it causes the current flowing through the IGBT to increase. This increase in current causes an increase in the device\'s power, control and switching speed. Furthermore, the IGBT\'s ability to transfer power and control between low and high voltage states makes it suitable for use in a variety of applications.

The IKA08N65H5XKSA1 is ideally suited for power applications such as solar inverters, motor control, and annunciator systems. It is also well-suited for high-frequency applications such as power line communication, radio frequency and audio amplifier control. Additionally, it can be used for switching power supplies and for controlling digital electronic devices. Because it can handle a wide range of input voltages, the IKA08N65H5XKSA1 is a very versatile transistor.

The IKA08N65H5XKSA1 is a powerful and reliable IGBT transistor. Its fast switching speed and low gate trigger current make it ideal for a variety of applications. Additionally, its ability to transfer power and control between low and high voltage states make it suitable for use in a variety of power applications. Overall, the IKA08N65H5XKSA1 is a highly versatile, reliable transistor, making it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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