IKB10N60TATMA1 Allicdata Electronics

IKB10N60TATMA1 Discrete Semiconductor Products

Allicdata Part #:

IKB10N60TATMA1TR-ND

Manufacturer Part#:

IKB10N60TATMA1

Price: $ 0.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 20A 110W TO263-3
More Detail: IGBT NPT, Trench Field Stop 600V 20A 110W Surface ...
DataSheet: IKB10N60TATMA1 datasheetIKB10N60TATMA1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 0.65896
2000 +: $ 0.61351
5000 +: $ 0.60593
Stock 1000Can Ship Immediately
$ 0.73
Specifications
Power - Max: 110W
Supplier Device Package: PG-TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 115ns
Test Condition: 400V, 10A, 23 Ohm, 15V
Td (on/off) @ 25°C: 12ns/215ns
Gate Charge: 62nC
Input Type: Standard
Switching Energy: 430µJ
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
Current - Collector Pulsed (Icm): 30A
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT, Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The IKB10N60TATMA1 is a single IGBT (Insulated Gate Bipolar Transistor) integrated circuit that has a wide range of applications. This device is a voltage- or current-driven, bipolar switching device that incorporates both an insulated gate FET and a bipolar transistor. This type of device is ideal for use in applications that require high switching speed with low power dissipation.

The IKB10N60TATMA1 employs a state-of-the-art silicon process, which provides excellent high-temperature performance, high efficiency and high reliability. Due to its wide range of features and benefits, the IKB10N60TATMA1 is suitable for use in a variety of applications. A few of these include lighting ballasts, air-conditioning systems, smart meters, and power supply circuits.

In terms of working principle, the IKB10N60TATMA1 behaves as a current-controlled switch. When an appropriate DC voltage is applied to the gate, electrons are drawn from the substrate and a conducting channel is formed between the Drain and Source. This results in a large current flow between the two terminals, which can be used to directly control the load. The current flow can be adjusted by varying the power supply voltage or the gate voltage.

Because of its high current ratings, the IKB10N60TATMA1 has the capability to switch high currents with very low switching losses. This, combined with its low gate-trigger voltage and low on-state voltage drop, makes it ideal for high-power applications such as AC motors and DC-DC converters. It can also be used in high frequency circuits, where its low on-state voltage drop and quick switching speed minimize the switching losses.

In conclusion, the IKB10N60TATMA1 is an ideal power switching device for a variety of applications due to its high current ratings, low switching losses, and low on-state voltage drop. Its current-control design makes it easy to use and makes it suitable for a wide range of applications including lighting ballasts, air-conditioning systems, smart meters, and power supply circuits.

The specific data is subject to PDF, and the above content is for reference

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