IKB15N65EH5ATMA1 Discrete Semiconductor Products

The IKB15N65EH5ATMA1, developed by Infineon, is a high power device designed specifically for a wide range of applications. This device belongs to the Transistors - IGBTs - Single category and provides performance and reliability.

The IKB15N65EH5ATMA1 is an IGBT (Insulated Gate Bipolar Transistor) that features high block voltage capability up to 650 V. This device has a fast switching time and is distinguished by low switching losses and a soft switching behavior, making it suitable for motor drives and power transmission applications. The device also benefits from a low gate charge, low on-state resistance and high current density, making it suitable for high current and power applications.

The IKB15N65EH5ATMA1 also features a multiple integrated Schottky clamps, which help to limit the peak current during short circuit conditions and reduce electromagnetic interference on the device. This makes it suitable for high voltage, high frequency switching applications. The device also benefits from a low turn-on voltage, fast turn-off time and is a soft switching device, making it suitable for a wide range of applications.

The IKB15N65EH5ATMA1’s working principle is based on the Ebers-Moll model of an IGBT, which describes the operation of an N-channel IGBT device. In short, an IGBT is an insulated-gate bipolar transistor (IGBT) that combines the conductivity of a bipolar transistor with the high input impedance of a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).

An IGBT is composed of two parts, the main switching gate terminal and the control gate terminal. The main switching gate terminal is electrically connected to the base electrode of the NPN transistor and the control gate terminal is electrically connected to the collector of the NPN transistor. The main switching gate terminal and the control gate terminal is also connected to the drain of the MOSFET.

The working principle of an IGBT is related to the fact that an IGBT is a "three terminal" device; the three terminals are the source (S), the drain (D), and the control gate (G). When a voltage is applied to the control gate, it generates an electric field that modulates the conductivity of the cells between the source and drain. This modulation of conductivity is what allows an IGBT to be either on or off, allowing the device to be used in various switching applications.

Despite the fact that the IKB15N65EH5ATMA1 belongs to the Transistors - IGBTs - Single category and works on the same principle as any other IGBT, it has some unique features that make it suitable for a wide range of applications. Its low switching loss, reduced EMI radiation, and high current density, for example, allow for it to be used in motor drives, power transmission and other high voltage applications.