IKB20N60TAATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKB20N60TAATMA1-ND |
Manufacturer Part#: |
IKB20N60TAATMA1 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 40A TO263-3 |
More Detail: | IGBT Trench Field Stop 600V 40A 156W Surface Mount... |
DataSheet: | IKB20N60TAATMA1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1000 +: | $ 1.14151 |
Series: | TrenchStop™ |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 40A |
Current - Collector Pulsed (Icm): | 60A |
Vce(on) (Max) @ Vge, Ic: | 2.05V @ 15V, 20A |
Power - Max: | 156W |
Switching Energy: | 310µJ (on), 460µJ (off) |
Input Type: | Standard |
Gate Charge: | 120nC |
Td (on/off) @ 25°C: | 18ns/199ns |
Test Condition: | 600V, 20A, 12 Ohm, 15V |
Reverse Recovery Time (trr): | 41ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKB20N60TAATMA1 is a single high-power device in the range of IGBT’s (Insulated-Gate Bipolar Transistors). When voltage is applied to the IGBT’s gate, the transistor will be “on”. The device has a substantial maximum current rating of up to 150A. This makes the IKB20N60TAATMA1 ideal for use in a variety of medium- and high-power applications that require reliable switching at very high currents.
The device is made up of two active layers sandwiched between a base and emitter layer; the base layer is where the gate voltage is applied, the emitter layer is the source for electrons and the two active layers (usually an N-type semiconductor and a P-type semiconductor) act as a resistor that costs the electrons from reaching the collector (which is connected to the load). If an electric current is applied to the base, electrons from the emitter (which is connected to the supply voltage) will flow through the two active layers, through the collector and load, and back to the supply. This flow of electrons will act as a switch, allowing the load to be switched on and off.
The main advantage of the IKB20N60TAATMA1 is its low “on” resistance. This will lower the voltage drop across the device and reduce power loss. This device is also able to handle very high peak currents, ensuring reliable and consistent operation, even in very demanding applications. The device is constructed using advanced fabrication techniques to ensure very high levels of thermal stability and reliability.
The IKB20N60TAATMA1 can be used in a variety of applications, such as motor controls and converters, automotive charging systems, home appliances, and industrial automation systems. It is also suitable for use in a wide range of electronic applications, such as audio amplifiers, switching drivers, and power supplies.
In summary, the IKB20N60TAATMA1 is a single high-power device in the range of IGBT’s. It has a large current rating of up to 150A, which makes it ideal for use in high-power applications that require reliable switching at high current levels. The device also has very low resistance and is able to handle very high peak currents. This makes it suitable for use in many different applications, ranging from motor controls and converters to home appliances and industrial automation systems.
The specific data is subject to PDF, and the above content is for reference
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