Allicdata Part #: | IKB20N65EH5ATMA1-ND |
Manufacturer Part#: |
IKB20N65EH5ATMA1 |
Price: | $ 1.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | INDUSTRY 14 |
More Detail: | IGBT Trench Field Stop 650V 38A 125W Surface Mount... |
DataSheet: | IKB20N65EH5ATMA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1000 +: | $ 1.04686 |
Series: | TrenchStop™ 5 |
Part Status: | Active |
RoHS Status: | RoHS Compliant |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 38A |
Current - Collector Pulsed (Icm): | 60A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 20A |
Power - Max: | 125W |
Switching Energy: | 560µJ (on), 130µJ (off) |
Input Type: | Standard |
Gate Charge: | 48nC |
Td (on/off) @ 25°C: | 19ns/160ns |
Test Condition: | 400V, 20A, 32 Ohm, 15V |
Reverse Recovery Time (trr): | 80ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
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The IKB20N65EH5ATMA1 is a single IGBT that offers high-performance Switching Power Control in a range of industrial and automotive applications. It features an integrated stray-field shield and improved shielding characteristics, making it a highly reliable device suitable for high temperature and high frequency operations. This device is designed for operation under harsh thermal and electrical conditions, and is ideal for applications requiring high frequency operation, such as inverters and motor control.
Applications
The IKB20N65EH5ATMA1 is suitable for use in a variety of industrial and automotive applications, such as inverters, motor drives, frequency converters, bus converters, and robotics. It is also ideal for applications in Battery Management Systems, where it can provide high power conversion efficiency and fast dynamic response. Additionally, it is well-suited for high-frequency switching applications, such as motor control, voltage regulation, and digital circuits. The device is capable of operating at high junction temperatures of up to 175°C, and can be used in automotive applications requiring high-temperature operation. It also features integrated protection against overvoltage, overcurrent, and short-circuit protection.
Working Principle
The functioning of IKB20N65EH5ATMA1 involves four general stages: triggering, conduction, recovery, and protection. First, the device is triggered, which turns on the collector current and generates a magnetic field. This field is coupled with the gate voltage to conduct electrons from the collector back to the emitter. During the conduction stage, the electrons are able to move freely between the collector and the emitter. The recovery stage involves the recharging of the collector and is essential for protecting the device from damage. Finally, the protection stage involves the use of integrated protection circuits that detect overvoltage, overcurrent, and short-circuit conditions and protect the device against these adverse events.
Conclusion
The IKB20N65EH5ATMA1 is a single IGBT that offers excellent performance in industrial and automotive applications, with a wide operating temperature range and integrated protection circuits. It features integrated stray-field shielding and improved shielding characteristics, making it suitable for high temperature and high frequency operations. Its high power conversion efficiency and fast dynamic response make it ideal for inverters, motor drives, frequency converters, bus converters, robotics, and Battery Management Systems. Finally, its conduction, recovery, and protection stages provide reliable, durable protection against adverse events.
The specific data is subject to PDF, and the above content is for reference
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