IKFW50N60DH3EXKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKFW50N60DH3EXKSA1-ND |
Manufacturer Part#: |
IKFW50N60DH3EXKSA1 |
Price: | $ 4.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 40A TO247-3 |
More Detail: | IGBT Trench Field Stop 600V 40A 130W Through Hole ... |
DataSheet: | IKFW50N60DH3EXKSA1 Datasheet/PDF |
Quantity: | 298 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.30290 |
10 +: | $ 3.86694 |
100 +: | $ 3.16846 |
500 +: | $ 2.69725 |
1000 +: | $ 2.27478 |
Series: | TrenchStop™ |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 40A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 40A |
Power - Max: | 130W |
Switching Energy: | 1.28mJ (on), 560µJ (off) |
Input Type: | Standard |
Gate Charge: | 160nC |
Td (on/off) @ 25°C: | 21ns/174ns |
Test Condition: | 400V, 40A, 8 Ohm, 15V |
Reverse Recovery Time (trr): | 64ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3-AL |
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An IKFW50N60DH3EXKSA1 belongs to a type of transistor called an insulated-gate bipolar transistor (IGBT). It is a kind of power semiconductor that is part of the MOSFET (metal-oxide-semiconductor field-effect transistor) family and is used in applications that require high voltage control and current switching. IGBTs are typically used in motor control, induction heating, solar inverters and uninterruptible power supplies.
An IKFW50N60DH3EXKSA1 is made of a single, integrated device with one emitter and two base terminals, as opposed to a bipolar transistor, which has two emitters and three base terminals. This gives an IGBT its advantage of high input impedance and low power consumption, since it uses fewer electrical components overall. An IGBT also allows for higher current control range and the ability to drive higher voltages in comparison to other transistors.
When an IKFW50N60DH3EXKSA1 works, a small current through the gate terminal controls a much larger current from the emitter to the collector, thus allowing for high voltage control. This is done by modulating the voltage between the gate and the emitter, which in turn controls the channel of electrons between the collector and the emitter. The more voltage applied to the gate, the stronger the electron channel, which results in more current flow.
An IKFW50N60DH3EXKSA1 also has the ability to withstand a high level of voltage without any damage to the circuit, which makes it suitable for a variety of high voltage applications. It has a break down voltage of 600V, a collector-emitter voltage of 800V and a collector current of up to 5A. In addition, it also has a minimum switching time of 2.1µs, which makes it suitable for high-speed applications such as digital clock signals.
An IKFW50N60DH3EXKSA1 is typically used in the following applications: high-power motor control, power conversion, amplifier circuits, static relays, uninterruptible power supplies and other control circuits. An IGBT can be used when switching higher current loads as well as when providing high-speed control and protection. It also has applications in renewable energy solutions such as solar inverters, electric vehicle charging and power management systems.
The IKFW50N60DH3EXKSA1 is an ideal choice for high power applications such as motor control, induction heating and inverters, as its ability to handle large currents and switch states quickly makes it suitable for these types of applications. It is also a cost-effective and reliable option for such applications.
The specific data is subject to PDF, and the above content is for reference
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