IKFW50N60DH3XKSA1

Transistors - IGBTs - Single: IKFW50N60DH3XKSA1 Application Field and Working Principle

The IKFW50N60DH3XKSA1 is a high power, high-voltage N-channel insulated-gate bipolar transistor (IGBT) suitable for high power switching applications. Also, the IKFW50N60DH3XKSA1 has an excellent temperature stability and short recovery time, making it an ideal choice for switching applications.

Applications

The IKFW50N60DH3XKSA1 is suitable for high-power switching applciations including dc to ac inverters and other high-power applications. The IKFW50N60DH3XKSA1’s fast switching capability, high voltage and current rating make it an ideal choice for high power switching applications such as in motor control systems, motor drives, and motor starters. The IKFW50N60DH3XKSA1 is also suitable for high-frequency resonant converter applications such as in switch-mode power supplies, UPS and server power systems, industrial control systems, consumer products and residential applications.

Features

• High voltage and current rating
• Excellent temperature stability
• Fast switching speed
• Low package inductance
• Low on-state resistance
• Backward compatible with standard TO-220 packages

Working Principle

The N-channel IKFW50N60DH3XKSA1 insulated-gate bipolar transistor (IGBT) operates according to the principle of minority carrier injection. A channel of electrons, called the on-state channel, is formed between the two P+ regions located on either side of the N-channel. The on-state channel is formed by holes being injected into the N-channel, which then flow towards the P+ region and is sustained by a continuous flow of holes which is generated by the P+ region.. When a gate voltage is applied to the insulated-gate, it creates a strong electric field at the PN junction, which in turn causes the minority carriers to be injected into the N-channel. This creates a strong electric field at the N-channel which causes the electrons in the on-state channel to be accelerated and hence gives rise to a high collector current. Since the on-state channel is sustained by a continuous flow of minority carriers, a continuous conduction of current through the IGBT occurs.

Conclusion

The IKFW50N60DH3XKSA1 is a high power, high-voltage N-channel insulated-gate bipolar transistor suitable for high power switching applications. It has excellent temperature stability and short recovery time, making it an ideal choice for switching applications. The IKFW50N60DH3XKSA1 is suitable for high-power switching applciations including dc to ac inverters and other high-power applications. The IKFW50N60DH3XKSA1 operates according to the principle of minority carrier injection and is sustained by a continuous flow of holes which is generated by the P+ region.