IKP15N65F5XKSA1 Allicdata Electronics
Allicdata Part #:

IKP15N65F5XKSA1-ND

Manufacturer Part#:

IKP15N65F5XKSA1

Price: $ 1.58
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 650V 30A 105W PG-TO220-3
More Detail: IGBT 650V 30A 105W Through Hole PG-TO220-3
DataSheet: IKP15N65F5XKSA1 datasheetIKP15N65F5XKSA1 Datasheet/PDF
Quantity: 30
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.43010
10 +: $ 1.28205
100 +: $ 1.03043
500 +: $ 0.84657
1000 +: $ 0.70144
Stock 30Can Ship Immediately
$ 1.58
Specifications
Power - Max: 105W
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 50ns
Test Condition: 400V, 7.5A, 39 Ohm, 15V
Td (on/off) @ 25°C: 17ns/150ns
Gate Charge: 38nC
Input Type: Standard
Switching Energy: 130µJ (on), 40µJ (off)
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Current - Collector Pulsed (Icm): 45A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An IGBT, which stands for Insulated Gate Bipolar Transistor, is a type of transistor that can be used in a variety of applications, most notably in motor control and switching. Motor control requires efficient switching of power at high voltages and with very fast switching times, so IGBT-based solutions offer enhanced performance over other types of transistor-based solutions. The IKP15N65F5XKSA1 is one such IGBT, designed for high-performance motor control applications by offering an on-state resistance of 15 mOhms at a maximum temperature of 150 degrees Celsius. Its rating also offers a low maximum input capacitance of 0.58 nF and its single design allows for simple and versatile circuit designs.

The IKP15N65F5XKSA1 is capable of supporting a high surge current to protect the device, allowing it to switch over larger loads quickly. It also boasts a very low conduction loss, meaning that it offers better efficiency in power transmission and is well-suited for applications such as UPS systems and adjustable speed drives. Furthermore, its single gate design incorporates an active protection feature which limits current, reducing stresses on the device and improving the device’s lifespan.

The working principle of the IKP15N65F5XKSA1 is fairly simple. It is, essentially, an electrostatic actuation type transistor, meaning that when a voltage is applied to the gate from an external circuit, it charges the junction between the gate and the base. The charged junction then allows holes and electrons to flow from the base to the collector, thus providing current flow from the collector to the emitter. This flow of current creates voltage potential between the collector and emitter, thus allowing current to flow between them as well.

The IKP15N65F5XKSA1 is suitable for a range of applications that require high inrush current protection, low conduction loss, and extremely fast switching times. It is popular in the industrial, automotive, and energy-saving sectors, but, due to its highly versatile design and robust features, it can be used in almost any application, such as UPS systems, adjustable speed drives, power conversion, motor control, and any other application that requires efficient switching of high power at high voltages.

In conclusion, the IKP15N65F5XKSA1 is an efficient and reliable IGBT, which offers excellent performance in a variety of applications. Its single-gate design provides enhanced flexibility and its robust features ensure that it can provide an enhanced throughput of high power at high voltages. Its working principle is fairly straightforward and its electrostatic actuation ensures that it can be used in a wide range of applications, from UPS systems to motor control and power conversion.

The specific data is subject to PDF, and the above content is for reference

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