Allicdata Part #: | IKP15N65H5XKSA1-ND |
Manufacturer Part#: |
IKP15N65H5XKSA1 |
Price: | $ 1.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 30A 105W PG-TO220-3 |
More Detail: | IGBT 650V 30A 105W Through Hole PG-TO-220-3 |
DataSheet: | IKP15N65H5XKSA1 Datasheet/PDF |
Quantity: | 104 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.58760 |
10 +: | $ 1.42443 |
100 +: | $ 1.14484 |
500 +: | $ 0.94056 |
1000 +: | $ 0.77933 |
Power - Max: | 105W |
Supplier Device Package: | PG-TO-220-3 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 48ns |
Test Condition: | 400V, 7.5A, 39 Ohm, 15V |
Td (on/off) @ 25°C: | 17ns/160ns |
Gate Charge: | 38nC |
Input Type: | Standard |
Switching Energy: | 120µJ (on), 50µJ (off) |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 45A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKP15N65H5XKSA1 is a single IGBT transistor designed to work in high power switching applications. It features a high frequency, spread-spectrum frequency control, making it suitable for high-speed motor control and other applications that require less thermal stress. The transistor features a low gate drive voltage, a low power consumption, a low noise level, and an improved on-state current carrying capability.
As a single IGBT, the IKP15N65H5XKSA1 offers more flexibility than many other IGBTs. It can be used as a switching device, or as part of an integrated system. It is well suited for applications such as motor control, power management systems, and power conversion.
The IKP15N65H5XKSA1 has a shielded gate drive, which is essential for reducing noise in the signal. This reduces EMI, which allows for the device to operate reliably in hostile electrical environments. The device is also designed to withstand high voltage and current transients, and is protected against overvoltage and overtemperature.
Moreover, the IKP15N65H5XKSA1 features an adjustable threshold voltage, which allows the device to be used in high-speed switching applications, while still providing low emissions. The transistor also has a low input capacitance, which helps reduce power losses and improve efficiency in applications that require high-power switching.
The IKP15N65H5XKSA1 operates in a self-selecting power plan, which can be set to either 100% on or 100% off. This allows the device to switch quickly and efficiently, while still providing maximum power efficiency. The device has an adjustable on-resistance, which allows for the device to be used for applications that require greater control over the energy profile.
The IKP15N65H5XKSA1 also has an adjustable soft start, which helps reduce startup current and reduce the stress at the gate. The device is also able to integrate low-noise switching into multiple IGBT circuits. The device is also capable of providing true short circuit protection, and the current can be monitored by external circuitry.
Finally, the IKP15N65H5XKSA1 offers strong fault protection and low power consumption, making it ideal for a variety of applications. The IGBT is designed to work in high power switching applications and offers maximum efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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