IKP20N60H3XKSA1 Allicdata Electronics
Allicdata Part #:

IKP20N60H3XKSA1-ND

Manufacturer Part#:

IKP20N60H3XKSA1

Price: $ 1.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 40A 170W TO220-3
More Detail: IGBT Trench Field Stop 600V 40A 170W Through Hole ...
DataSheet: IKP20N60H3XKSA1 datasheetIKP20N60H3XKSA1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
500 +: $ 0.95215
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Series: TrenchStop®
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Power - Max: 170W
Switching Energy: 690µJ
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 16ns/194ns
Test Condition: 400V, 20A, 14.6 Ohm, 15V
Reverse Recovery Time (trr): 112ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Description

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The IKP20N60H3XKSA1 is a field-stop IGBT, belonging to the range of single IGBTs. It is designed for use in high power applications, and boasts a high energy efficiency which has made it a increasingly popular choice among engineers. The IKP20N60H3XKSA1 exhibits excellent electrical performance and is one of the best cost-effective options currently available.

An IGBT is a type of semiconductor device which combines the characteristics of a traditional metal-oxide semiconductor field effect transistor (MOSFET) with those of a bipolar junction transistor (BJT). In general, it has wider voltage range and can handle larger current than a MOSFET, and can also switch faster than a BJT. It features a high blocking voltage and low on-state resistance, as well as a low gate driving requirement. The IKP20N60H3XKSA1 has a 600V blocking voltage and 3000V EAS, making it well-suited for high power applications.

The IKP20N60H3XKSA1 ’s application field encompasses lighting, automotive, industrial, and consumer electronics applications. They are ideal for a wide range of industrial and consumer applications, such as motor control, welding machines, UPS systems, elevators and home appliances.

The IKP20N60H3XKSA1 \'s working principle is based on the unique performance characteristics of an IGBT. It features an intrinsic diode which helps to provide a high-speed electrical switch, making it an ideal choice for fast switching applications. The device has a drain-source voltage of 600 V, a IGBT DC current of 30 A, and a gate-emitter voltage of 17 V. The device also provides excellent switching performance with a fast switching transition time.

The IKP20N60H3XKSA1 is equipped with a Field Stop technology which improves the turn-off characteristics of the device. This technology enables high voltage and current operation, making the device suitable for high power applications. It also helps to reduce leakage current. Overall, the IKP20N60H3XKSA1 is a highly efficient and reliable device which can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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