IKP20N65H5XKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKP20N65H5XKSA1-ND |
Manufacturer Part#: |
IKP20N65H5XKSA1 |
Price: | $ 1.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT TRENCH 650V 42A TO220-3 |
More Detail: | IGBT Trench 650V 42A 125W Through Hole PG-TO-220-3 |
DataSheet: | IKP20N65H5XKSA1 Datasheet/PDF |
Quantity: | 259 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 1.77030 |
10 +: | $ 1.59012 |
100 +: | $ 1.27795 |
500 +: | $ 1.04997 |
1000 +: | $ 0.86997 |
Power - Max: | 125W |
Supplier Device Package: | PG-TO-220-3 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 52ns |
Test Condition: | 400V, 10A, 32 Ohm, 15V |
Td (on/off) @ 25°C: | 18ns/156ns |
Gate Charge: | 48nC |
Input Type: | Standard |
Switching Energy: | 170µJ (on), 60µJ (off) |
Series: | TrenchStop™ |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 60A |
Current - Collector (Ic) (Max): | 42A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKP20N65H5XKSA1 is a Single IGBT transistor device, described as a "Robust Switching Thyristor". It is built on a specially designed Insulated-Gate-Bipolar-Transistor (IGBT) simulation technology and is used in a variety of applications such as power supplies, motor control, and industrial automation.
The IKP20N65H5XKSA1 has a maximum junction temperature of 150ºC, a current rating of 25A, an onset voltage of 7V, a breakdown voltage of 800V, and a continuous current rating of 25A. It has an operating temperature range of -40ºC to +150ºC, and is designed to be used in various power applications.
The operating principle of the IKP20N65H5XKSA1 is based on the principles of voltage control. It has two gate terminals; one gate is connected to the control signal, while the other is connected to the power signal. When a voltage signal is applied to the control gate, it turns on and off the signal on the power gate. In the "on" state, current will flow to the load, but in the "off" state, the signal is not allowed to flow and the load is not powered.
The IKP20N65H5XKSA1 is widely used in power applications such as motor control and power supplies. It is also used in industrial automation, especially in equipment that requires high switching frequencies with low power dissipation. It can also be used in note-books and portable devices, such as mobile phones and tablet PCs.
The IKP20N65H5XKSA1 is a relatively low-cost device and is easy to install and use. Its robust construction makes it ideal for harsh environment applications. It also has good thermal performance and is well-suited for use in applications where voltage and current peaks are hard to control.
In conclusion, the IKP20N65H5XKSA1 is a single IGBT transistor built on a robust switching thyristor technology. It has a wide temperature operating range, is easy to install, and is well-suited for applications requiring high switching frequency with low power dissipation. It is well-suited for various power applications, such as motor control and power supplies, as well as industrial automation.
The specific data is subject to PDF, and the above content is for reference
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