IKQ100N60TXKSA1 Discrete Semiconductor Products

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The IKQ100N60TXKSA1 is an Insulated-Gate Bipolar Transistor (IGBT) device, specifically classified within the Single category of such transistors. As a type of power semiconductor, IGBTs are a combination of the best characteristics of both the normally-on field-effect transistor (FET) and the normally-off Bipolar Junction Transistor (BJT).

The IKQ100N60TXKSA1 has a maximum collector current of 100A with a Turn OFF voltage of 600V. In addition, the device has a collector-emitter saturation voltage of of 2.4V at 100A, a junction temperature operation of up to 150 degrees C, and a power dissipation of 276W. These features make the IKQ100N60TXKSA1 suitable for a wide range of applications, such as motor drive control, home appliance control, lighting control, automotive control, factory automation, induction heating control, HVAC, and solar power inverter systems.

The working principle of the IKQ100N60TXKSA1 is based on the interaction between the main voltage components of the device: the P-type front cell and the N-type rear cell. The P-type cell behaves as a FET, forming a horizontal channel and controlling the flow of current between the collector and emitter. When the gate voltage falls below the emitter voltage by at least a diode drop, the FET is turned OFF. Thus, the IKQ100N60TXKSA1 acts as a normally-off device.

The N-type rear cell behaves as a BJT, analogous to a vertical channel between the collector and the base-emitter junction. When the gate voltage rises above the emitter voltage, the current between the collector and emitter increases. This process is supported by the current resulting from the amount of current flowing from the base-emitter junction to the collector. As a result, the IKQ100N60TXKSA1 acts as a normally-on device. The combination of both cells creates the IGBT power switch that allows fast switching at high voltages.

Secondary protection of the device is also crucial. The IKQ100N60TXKSA1 contains various structures and features that provide over-temperature protection. These include a high blocking voltage (Vces) and temperature detection circuits (TDC). In addition, the device is equipped with an internally-created short circuit protection (ICSP) that prevents false triggering of over current protection (OCP).

In conclusion, the IKQ100N60TXKSA1 is a single-channel IGBT device suitable for a variety of applications due to its features, such as its high collector current and power dissipation, wide junction temperature operation range, and additional protection. The device works through the combination of both a P-type front cell, behaving as a FET, and an N-type rear cell, behaving as a BJT. This combination creates the IGBT power switch that allows the device to rapidly turn OFF and ON at high voltages, making the IKQ100N60TXKSA1 ideal for its application field.

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