IKQ120N60TXKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IKQ120N60TXKSA1 is an insulated-gate bipolar transistor (IGBT) that is part of the family of single IGBTs. This type of transistor is typically used in areas and applications requiring high-power switching and/or high-frequency switching (up to 100kHz). It has a very low gate-charge inductance of 0.7 nH, making it ideal for high-frequency and high-power applications.The IKQ120N60TXKSA1 has a maximum collector-emitter voltage of 600V, a maximum collector current of 120A, and a maximum gate-emitter voltage of 12V. The maximum junction temperature is 175°C, and the maximum thermal resistance is 6.9 °C/W. The IGBT has a low value of gate-emitter capacitance and very fast switching characteristics with low turn-on and turn-off times. Finally, the device has a robust construction and is designed to withstand a wide range of environmental conditions, making it suitable for a variety of applications.

The IKQ120N60TXKSA1 can be used in several different applications, including motor control, switching power supplies, UPS systems, and AC/DC, DC/DC and DC/AC conversion. It is also suitable for high-frequency and high-power applications, such as welding and induction heating. It can be used in circuit topologies such as half-bridge and full-bridge.The working principle of the IKQ120N60TXKSA1 is that when a positive voltage is applied to the gate, a current is allowed to flow from the collector to the emitter, and the transistor is said to be “on”. When a negative voltage is applied to the gate, the current is blocked and the transistor is said to be “off”. The amount of current flow can be controlled by the amount of voltage that is applied to the gate. The IKQ120N60TXKSA1 is designed such that the voltage drop between the collector and the emitter is small when the transistor is in the “on” state. This makes it efficient in the applications mentioned above.

In conclusion, the IKQ120N60TXKSA1 is an insulated-gate bipolar transistor that is part of the family of single IGBTs. It has a maximum collector-emitter voltage of 600V, a maximum collector current of 120A, and a maximum gate-emitter voltage of 12V. The device is suitable for a range of applications requiring high-power and/or high-frequency switching, such as motor control, switching power supplies, UPS systems, AC/DC, DC/DC and DC/AC conversion, and welding and induction heating. The working principle states that when a positive voltage is applied to the gate, a current can flow from the collector to the emitter, and when a negative voltage is applied to the gate, the current is blocked. This allows the amount of current flow to be controlled by the amount of voltage that is applied to the gate. Thus, the IKQ120N60TXKSA1 is an efficient and reliable solution for various applications.

The specific data is subject to PDF, and the above content is for reference