| Allicdata Part #: | IKQ40N120CH3XKSA1-ND |
| Manufacturer Part#: |
IKQ40N120CH3XKSA1 |
| Price: | $ 6.15 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT HS SW 1200V 40A TO-247-3 |
| More Detail: | IGBT 1200V 80A 500W Through Hole PG-TO247-3-46 |
| DataSheet: |  IKQ40N120CH3XKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 5.59440 |
| 10 +: | $ 5.05197 |
| 100 +: | $ 4.18251 |
| 500 +: | $ 3.64206 |
| Power - Max: | 500W |
| Supplier Device Package: | PG-TO247-3-46 |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Test Condition: | 400V, 40A, 12 Ohm, 15V |
| Td (on/off) @ 25°C: | 30ns/300ns |
| Gate Charge: | 190nC |
| Input Type: | Standard |
| Switching Energy: | 3.3mJ (on), 1.3mJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 40A |
| Current - Collector Pulsed (Icm): | 160A |
| Current - Collector (Ic) (Max): | 80A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Moisture Sensitivity Level (MSL): | -- |
| IGBT Type: | -- |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
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The IKQ40N120CH3XKSA1 is a modular IGBT (Insulated Gate Bipolar Transistor) chip, designed for high-power applications such as motor control, inverters, power supplies, and power drive units. This technology offers significantly higher power levels than the conventional MOSFET (Metal Oxide Semiconductor Field Effect Transistors).
The IKQ40N120CH3XKSA1 consists of a single IGBT device and provides a maximum rated current of 40A and a blocking voltage rating of 1200V. The chip also offers temperature protection, fault and protection, and high dv/dt immunity.
The IKQ40N120CH3XKSA1 is extremely versatile and can be used in a wide range of applications. It can be used in motor control, motor drives, static frequency converters, pressure control and speed control. It is also suitable for use in high-power switching applications, such as in electric vehicles and renewable energy systems.
The working principle of an IGBT is based on a junction field-effect transistor (JFET) structure. The IGBT has two back-to-back connected JFETs in a single chip, with a P-channel JFET connected between the other two. When a voltage is applied to the gate of the P-channel JFET it modulates the current flowing through the other two JFETs. By controlling the current, the IGBT can turn on and off, allowing it to switch the power levels in an application.
The IKQ40N120CH3XKSA1 has a wide range of benefits such as low power losses to enable high efficiency, low switching noise to eliminate interference, fast switching speeds to minimize no-load losses, and easy integration with power electronics applications. In addition, this technology offers a high degree of immunity to voltage and current spikes.
The IKQ40N120CH3XKSA1 is one of the best solutions for high-power applications, offering robust performance and reliable operation. It is an energy-efficient option for a wide range of applications, from motor control to renewable energy systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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