IKQ40N120CT2XKSA1

Power - Max:	500W
Supplier Device Package:	PG-TO247-3-46
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	600V, 40A, 12 Ohm, 15V
Td (on/off) @ 25°C:	32ns/328ns
Gate Charge:	190nC
Input Type:	Standard
Switching Energy:	3.1mJ (on), 2.9mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 40A
Current - Collector Pulsed (Icm):	160A
Current - Collector (Ic) (Max):	80A
Voltage - Collector Emitter Breakdown (Max):	1200V
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Lead Free Status / RoHS Status:	--
Part Status:	Active

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The IKQ40N120CT2XKSA1 is a high-power, medium-voltage Insulated Gate Bipolar Transistor (IGBT) that has a variety of applications and a unique working principle. IGBTs have become a popular choice for medium to high-power applications due to their superior performance and reliability compared to other types of discrete semiconductor components. The IKQ40N120CT2XKSA1 is an example of a medium-voltage, low-loss IGBT that is capable of handling currents in the range of 2 - 40A, with a maximum load voltage of 1200V.The IKQ40N120CT2XKSA1 is a single-chip IGBT device, meaning that all of its components are housed in a single package. This simplifies the manufacturing process and makes the device easier to handle and mount. The device features a low-voltage gate drive which eliminates the need for special gate drive components, such as an external gate resistor. This also allows for easy current control and protection of the IGBT. Another feature of the IKQ40N120CT2XKSA1 is its fast switching speed, which allows it to react quickly to changing loads.As with most IGBTs, the IKQ40N120CT2XKSA1 is based on an NPN-type semiconductor construction. This type of construction uses a P-type and N-type semiconductor material to form collector and emitter junctions, respectively. The IGBT has a unique structure that adds a gate voltage between the collector and emitter junctions. The gate voltage is used to control the current flow through the device; when the gate voltage is turned on, current flows through the collector-emitter junction and when it is turned off, no current flows.The IKQ40N120CT2XKSA1 is an ideal device for applications such as motor control, power correction, and power regulation. It can be used in AC/DC and DC/DC converters, motor drives, uninterruptable power supplies (UPSs), and other power conversion applications. The device is also well-suited to automotive applications, such as starter motors, alternators, and electric power steering systems.In summary, the IKQ40N120CT2XKSA1 is a medium-voltage IGBT device with low-loss and fast switching capability. Its low-voltage gate drive simplifies the design process while its fast switching speed makes it suitable for a wide range of medium and high power applications. The device is based on an NPN-type semiconductor construction and is particularly well-suited for use in vehicle applications.

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