| Allicdata Part #: | IKW75N65EH5XKSA1-ND |
| Manufacturer Part#: |
IKW75N65EH5XKSA1 |
| Price: | $ 4.75 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT TRENCH 650V 90A TO247-3 |
| More Detail: | IGBT Trench 650V 90A 395W Through Hole PG-TO247-3 |
| DataSheet: |  IKW75N65EH5XKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 4.31550 |
| 10 +: | $ 3.89655 |
| 100 +: | $ 3.22604 |
| 500 +: | $ 2.80918 |
| 1000 +: | $ 2.44671 |
Specifications
| Power - Max: | 395W |
| Supplier Device Package: | PG-TO247-3 |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Reverse Recovery Time (trr): | 92ns |
| Test Condition: | 400V, 75A, 8 Ohm, 15V |
| Td (on/off) @ 25°C: | 28ns/174ns |
| Gate Charge: | 160nC |
| Input Type: | Standard |
| Switching Energy: | 2.3mJ (on), 900µJ (off) |
| Series: | TrenchStop™ |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 75A |
| Current - Collector Pulsed (Icm): | 300A |
| Current - Collector (Ic) (Max): | 90A |
| Voltage - Collector Emitter Breakdown (Max): | 650V |
| IGBT Type: | Trench |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Description
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The IKW75N65EH5XKSA1 is one of the latest IGBTs (Insulated Gate Bipolar Transistors) developed by Infineon. This device is one of the most advanced IGBTs available with a wide range of features and benefits. It is a single IGBT which provides high power and reliability in a compact package. The IKW75N65EH5XKSA1 has a wide range of applications in the field of power electronics and electrical engineering. This device is widely used in electric power conversion and control systems, switching power supplies and motor control. It is also suitable for use in industrial and domestic applications such as lighting systems and uninterruptible power supplies. The IKW75N65EH5XKSA1 has several features that make it an ideal choice for power electronics applications. It has a maximum voltage rating of 650V, a peak current rating of 75A, and an operating temperature range of -40°C to 125°C. It is also highly efficient, with a switching speed of up to 1.7us and a low gate threshold voltage of 2.6V. These features combine to make the IKW75N65EH5XKSA1 one of the most advanced IGBTs available.The IKW75N65EH5XKSA1 operates on a simple principle of electrical conduction. In this device, the two terminals, the collector and the emitter, are separated by the insulated gate. A signal applied to the gate creates an electric field between the collector and emitter, controlling the conduction between them. This process creates a current flow across the device, resulting in power conversion.In summary, the IKW75N65EH5XKSA1 is a single IGBT device with a wide range of features and benefits. It is highly reliable and efficient, making it an ideal component for power electronics and electrical engineering applications. The device utilizes the principle of electrical conduction, whereby an electric field is used to control current flow across the device and convert power accordingly.
The specific data is subject to PDF, and the above content is for reference
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