IKW75N65EL5XKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKW75N65EL5XKSA1IN-ND |
Manufacturer Part#: |
IKW75N65EL5XKSA1 |
Price: | $ 6.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 75A FAST DIODE TO247-3 |
More Detail: | IGBT 650V 80A 536W Through Hole PG-TO247-3 |
DataSheet: | IKW75N65EL5XKSA1 Datasheet/PDF |
Quantity: | 202 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 5.65110 |
10 +: | $ 5.10552 |
100 +: | $ 4.22711 |
500 +: | $ 3.68092 |
Series: | TrenchStop™ 5 |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 300A |
Vce(on) (Max) @ Vge, Ic: | 1.35V @ 15V, 75A |
Power - Max: | 536W |
Switching Energy: | 1.61mJ (on), 3.2mJ (off) |
Input Type: | Standard |
Gate Charge: | 436nC |
Td (on/off) @ 25°C: | 40ns/275ns |
Test Condition: | 400V, 75A, 4 Ohm, 15V |
Reverse Recovery Time (trr): | 114ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IKW75N65EL5XKSA1 is a high-voltage insulated gate bipolar transistor (IGBT) module, which is designed to safely deliver current and voltage in a wide range of applications. It has an ultra-low leakage current, as well as excellent power cycling capabilities. The device can also withstand high temperatures and high levels of humidity, making it an ideal choice for applications in industrial and automotive applications.
Application Field and Working Principle
The IKW75N65EL5XKSA1 module is primarily used in industrial applications, such as motor drives, variable frequency drives, power rectifiers and uninterruptible power supplies. It can also be used in automotive applications, including electric vehicle (EV) charging, energy storage systems and solar inverters. The device is able to deliver efficient switching and high power density in these applications.
The IKW75N65EL5XKSA1 module uses the principle of insulated gate bipolar transistor technology to achieve efficient switching and high power density. This technology combines the advantages of MOSFETs (metal oxide semiconductor field effect transistors) and bipolar transistors, making it a powerful solution for industrial and automotive applications. The IGBTs have a low-on voltage and low-off voltage, which allow them to be used in high switching frequencies. In addition, they have excellent surge current capability and can be used in applications requiring high voltages and high currents.
The IKW75N65EL5XKSA1 module is a single-channel IGBT module, meaning it supports just one gate electrode. This makes it ideal for applications where the load is fixed or a simple switch control is required. The device is capable of switching two states: ON (where electric current flows) and OFF (where electric current does not flow) at low frequencies. The IKW75N65EL5XKSA1 module is capable of switching up to 65A of current and up to 75V of voltage.
In addition to its excellent switching capabilities, the IKW75N65EL5XKSA1 module also offers excellent thermal resistance, meaning it can withstand extreme temperatures and high temperatures. It is also capable of withstanding high levels of humidity, making it suitable for applications in industrial and automotive applications. Its low-on and low-off voltage also allows for more efficient operation.
The IKW75N65EL5XKSA1 module is a versatile and reliable solution for industrial and automotive applications. Its insulated gate bipolar transistor technology enables efficient switching and high power density, while its thermal resistance and low-on and low-off voltage capabilities allow for reliable and efficient operation. This makes it an ideal choice for applications where a single-channel IGBT is needed.
The specific data is subject to PDF, and the above content is for reference
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