IKZ50N65EH5XKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IKZ50N65EH5XKSA1-ND |
Manufacturer Part#: |
IKZ50N65EH5XKSA1 |
Price: | $ 4.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 50A CO-PACK TO-247-4 |
More Detail: | IGBT Trench 650V 85A 273W Through Hole PG-TO247-4 |
DataSheet: | IKZ50N65EH5XKSA1 Datasheet/PDF |
Quantity: | 342 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 3.64140 |
10 +: | $ 3.27222 |
100 +: | $ 2.68109 |
500 +: | $ 2.28238 |
1000 +: | $ 1.92490 |
Series: | TrenchStop™ 5 |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 85A |
Current - Collector Pulsed (Icm): | 200A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
Power - Max: | 273W |
Switching Energy: | 410µJ (on), 190µJ (off) |
Input Type: | Standard |
Gate Charge: | 109nC |
Td (on/off) @ 25°C: | 20ns/250ns |
Test Condition: | 400V, 25A, 12 Ohm, 15V |
Reverse Recovery Time (trr): | 53ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-4 |
Supplier Device Package: | PG-TO247-4 |
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An IKZ50N65EH5XKSA1 is a high-performance N-channel IGBT that is typically used in applications such as consumer electronics, renewable energy, or industrial systems. It is one of the most popular types of IGBTs due to its versatility, high power density, and low losses.
The IKZ50N65EH5XKSA1 is a single IGBT device that features a typical junction temperature of 150°C and is designed to operate in a frequency range of up to 50kHz. The device has an on-state voltage rating of 650V, an on-state current rating of 50A (MOSFET rating), and a gate threshold voltage (VGS) rating of ±20V.
The IKZ50N65EH5XKSA1 has a low gate-source capacitance, and its collector-emitter breakdown voltage is also quite high. The device offers a low turn-on/off delay time and a low switching noise as compared to other types of IGBTs. Moreover, it has reverse bias safe operating area (RBSOA) ratings that are far superior to those of other IGBTs.
This IGBT device has a unique internal structure that includes a p-oxide layer, a control layer, and an n-oxide layer. This combination allows for an optimized gain, higher energy efficiency, and improved thermal performance. Additionally, the device has an integrated reverse bias protection feature that helps prevent short-circuiting and damages.
The IKZ50N65EH5XKSA1 IGBT is a three-terminal device that works by using a voltage applied to the gate terminal to control the current passing from the collector terminal to the emitter terminal. The device has a unique characteristic that allows it to switch rapidly between two distinct states, on and off. When the device is in the on-state, the voltage is applied across the device and current flows through the device. When the device is in the off-state, the voltage is removed and no current flows.
The inherent structure of the IKZ50N65EH5XKSA1 IGBT allows the device to be used in a variety of applications. It is often used in power switching, rectifier circuits, voltage regulator designs, and motor control circuits. Additionally, the device is used in appliance motors and white goods as well as high-voltage power lines and UPS power supplies.
In order to provide the most reliable results, it is important to make sure that the device is used in combination with the correct driver circuit. The driver circuit supplies the gate with a low-voltage, high-current signal and ensures the correct voltage is applied across the device in order to turn it on or off. The device is also available in a variety of package types, making it easier to integrate into any design.
Overall, the IKZ50N65EH5XKSA1 IGBT is a high-performance device that is suitable for a wide range of applications. Its combination of features, such as its low gate-source capacitance, low turn-on/off delay time, robust design, and high current rating make it an ideal choice for cost-effective and reliable power switching solutions.
The specific data is subject to PDF, and the above content is for reference
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