IKZ50N65NH5XKSA1

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The IKZ50N65NH5XKSA1 is a high-thermal-conductivity, medium-sized power insulated-gate bipolar transistor (IGBT) module featuring low conduction losses. It belongs to the Single IGBT family and is suitable for numerous applications.

Single IGBTs are discrete components made up of an insulated-gate bipolar transistor (IGBT) and an anti-parallel diode in the same package. An IGBT is a power semiconductor device with insulated gate able to control a high power flow. These devices are ideal for applications where high power is needed for short periods of time such as in automotive and motor control applications.

The IKZ50N65NH5XKSA1 features a VCE(sat) rating of 1.25V at a typical collector current (IC) of 50A and TA=25°C. It is available in the TO-220FP package, with a total thermal resistance of 1.3 K/W that allows the device to dissipate up to 71.25W with a junction temperature of 150°C. The device also has inhibit logic that allows the device to be used in an active clamp circuit that minimizes switching noise and overshoot.

The IKZ50N65NH5XKSA1’s working principle relies on the insulated gate bipolar transistor (IGBT). These transistors use an insulated gate to control the flow of electric current. At low gate voltages, the IGBT acts like a normal closed switch, allowing current to flow from collector to emitter. At increasing gate voltages, the IGBT starts to conduct due to a process called punch-through, where the base current is channeled directly to the collector, thus allowing the transistor to be fully activated.

The IKZ50N65NH5XKSA1 is suitable for a number of applications due to its low conduction losses and high thermal conductivity. It is appropriate for automotive and motor control applications, such as in engine and motor control, inverters, motor drive circuits, motor brake circuits, alternators, and switching power supplies. Additionally, it can be used in high frequency applications, high voltage transmission lines, and in AC orDC servo-circuits.

In conclusion, the IKZ50N65NH5XKSA1 is a single high thermal-conductivity IGBT device suitable for many applications due to its low conduction losses and the ability to dissipate up to 71.25W. Its insulated gate bipolar transistor (IGBT) working principle allows current to flow from collector to emitter when the gate voltage is low and enables the transistor to be fully activated at increasing gate voltage. The power module is an ideal choice for automotive and motor control applications and can handle both high voltage transmission lines and high frequency applications as well.

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