Allicdata Part #: | IMT4T108TR-ND |
Manufacturer Part#: |
IMT4T108 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2PNP 120V 0.05A 6SMT |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 120V 5... |
DataSheet: | IMT4T108 Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SMT6 |
Base Part Number: | MT4 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IMT4T108 transistors are a type of bipolar junction transistor (BJT) array that is used in a variety of applications, particularly in motor and power automation. They are designed to provide excellent thermal insulation and are capable of withstanding high voltage and current levels. The IMT4T108 transistors are used in a variety of applications including motion and process control, lighting control, and robotics. They are able to deliver high current and power reliably through their robust design.
The IMT4T108 transistors are available in various packages including Surface Mount Device (SMD) and DIP, as well as as single, dual and quadruple transistor types for a wide range of voltage and current requirements. They are designed to deliver very low on-voltage, low leakage current, and high breakdown voltage. In addition, they are designed to have a low switching noise and a low thermal resistance.
The primary working principle of the IMT4T108 transistors is based on a modified version of the standard NPN BJT (bipolar junction transistor) configuration. This modification includes independent control pins plus a common emitter diode that provides much of the same functionality. Additionally, the collectors of the NPN transistors are electrically connected to the common emitter terminal, providing additional electrical insulation between the collector and emitter.
The IMT4T108 transistors can be used to control a multitude of applications, including high-speed switching and motor drives. They have the ability to drive up to 6A of current, and feature high switching speeds for rapid rise and fall times. Additionally, a variety of device types is available for different applications, such as low-side drivers, high-side drivers, Darlington drivers, and tri-state devices.
The high-impedance of the IMT4T108 transistors makes them suitable for high-speed switching applications. The transistors have the ability to switch between high and low states rapidly, providing fast switching for high current applications. This can be beneficial for applications that require frequent switching, such as motor drives, where it is necessary to switch the current quickly.
In addition to motor control, the high frequency characteristics of the IMT4T108 transistors make them particularly suitable for fast control of other applications. Applications such as dimming, lighting control, and audio processing can take advantage of the high switching speeds offered by the transistors, as well as their low distortion levels. They also provide advanced power conditioning for applications operating in extreme temperature or voltage ranges.
The IMT4T108 transistors have a wide variety of uses, making them one of the most versatile BJT arrays on the market. They are able to provide reliable performance over a wide range of temperature and power ranges, making them suitable for applications in extreme conditions. In addition, the independent control pins and the robust design of the transistors make them ideal for applications that require switching between high and low states quickly.
The specific data is subject to PDF, and the above content is for reference
TRANS NPN/PNP 45V 0.1A 6DFNBipolar (BJT)...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...