IMX1T110 Allicdata Electronics
Allicdata Part #:

IMX1T110TR-ND

Manufacturer Part#:

IMX1T110

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN 50V 0.15A 6SMT
More Detail: Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 15...
DataSheet: IMX1T110 datasheetIMX1T110 Datasheet/PDF
Quantity: 1015
Stock 1015Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 180MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6
Base Part Number: *MX1
Description

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The IMX1T110 is a top-notch application field transistor array of the type bipolar (BJT). This particular device is designed by an American semiconductor manufacturer, Intersil Corporation, to offer superior performance in high speed applications. The main features of this array are its wide operating range and excellent electrical characteristics. This device is an ideal choice for use in many types of applications, including power amplifiers, logic circuits, and power management.

The IMX1T110 is composed of four bipolar transistors arranged in an array package. The array package helps to minimize the area of the die, providing great savings in the cost of manufacture and assembly. The four transistors of the array are connected in a ‘T’ configuration, with two transistors connected in series, and two in parallel. This T configuration allows the transistor array to switch between two different voltage levels, and thus modify the level of current that is supplied to the device.

The operating range of the IMX1T110 is quite impressive, as it can operate in voltage ranges from 900 mV to 500 V. This wide range makes the IMX1T110 an ideal choice for use in high-voltage systems. The device is also able to operate at high frequencies, which makes it suitable for a wide range of applications. Another feature of the IMX1T110 is its low noise emission, which is useful for applications where noise levels must be kept to a minimum.

In terms of its working principle, the IMX1T110 functions like any other bipolar junction transistor. When a small current is applied to the base, it modulates the current flowing from the collector to the emitter. This current flow is then used to power other circuits or to deliver a certain level of output voltage. The current gain of the transistor array is also adjustable, allowing the device to be used to create a wide range of levels of amplification.

The IMX1T110 is also readily available in a protected package that includes a Zener diode to provide added protection in the case of an electrical surge. The protection package also includes an internal bias resistor that helps to ensure stable performance even in the most demanding conditions. Overall, the IMX1T110 offers excellent performance and reliability at a great price.

The IMX1T110 is an impressive application field transistor array that offers excellent electrical characteristics and a wide operating range. It is ideal for use in many types of power amplifiers, logic circuits and power management applications. Its working principle is the same as any other bipolar junction transistor, with a small current applied to the base to modulate the current flowing from the collector to the emitter. The array is provided with an impressive array package, a protected package and an internal bias resistor, all of which ensure great performance in demanding conditions. In conclusion, the IMX1T110 is a great choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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