Allicdata Part #: | IMZ2AT108TR-ND |
Manufacturer Part#: |
IMZ2AT108 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN/PNP 50V 0.15A 6SMT |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA ... |
DataSheet: | IMZ2AT108 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 180MHz, 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SMT6 |
Base Part Number: | *MZ2 |
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The IMZ2AT108 is a high-performance transistor array. It is typically used in situations that require long-term, reliable performance. As the name implies, this type of transistor array generally consists of two or more transistors in a single package. This type of array is commonly used in applications such as amplifiers, logic gates, and switching amplifiers.
The IMZ2AT108 is a Bipolar Junction Transistor (BJT) array, meaning that each of the transistors in the array is a BJT and requires two distinct base and collector terminals. The array also includes a substrate connection, which is typically used for grounding. By networking two or more transistors in this way, it is possible to increase the gain of an amplifier, or to create an amplifier with multiple gain levels.
The BJT array has numerous advantages over traditional single-transistor designs. For example, with the BJT array, the output current can be adjusted by varying the base current of the individual transistors in the array. The array also helps to reduce power consumption and save space. Additionally, because BJT arrays are designed with multiple transistors, they are typically more reliable than single-transistor designs.
The working principle of the IMZ2AT108 is straightforward. When a current is applied to the base terminal, the voltage between the base and the collector will rise. The current between the two terminals will increase, and the transistor will switch on. As the current applied to the base increases, the voltage between the base and the collector will also increase. This voltage difference can be used to adjust the gain of an amplifier or the gain of a logic gate.
This BJT array is often used for applications that require high-current gains. For example, it is suitable for power control in automotive applications, where it can be used as an effective way to control power consumption. Additionally, the array can be used to switch signal transmission between two circuits with different levels of voltages. This level of control makes it highly valuable in any situation where precise power conservation and signal integrity are important.
In summary, the IMZ2AT108 is a high-performance transistor array that has many applications. It is a BJT array, which means that it consists of two or more transistors in a single package. Additionally, it is capable of producing a high current gain, making it suitable for a variety of applications such as power control in automotive systems or signal switching between two different circuits. Its working principle is simple: when a current is applied to the base, the voltage between the base and the collector will increase, and the current between the two terminals will increase, switching on the transistor.
The specific data is subject to PDF, and the above content is for reference
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