INA2180A3IDGKR

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The INA2180A3IDGKR is a linear amplifier that is primarily used in instrumentation, operational amplifiers, buffer amplifiers, as well as other applications. It is designed to provide wide bandwidth ranging from 5 kHz to 400 kHz. It is well-suited for applications needing low noise, low input bias current, and low distortion.

In terms of the physical design of INA2180A3IDGKR, it is in an 8-pin SOIC-N package. It operates over a temperature range of -40C to 85C. Since it is an amplifier, it naturally requires a continuous supply voltage for operation, ranging from 2.5 V to 32 V.

The INA2180A3IDGKR is composed of two sections– an input stage and an output stage. Its input stage is composed of a single, low-noise amplifier that is made up of a pair of high-speed p-channel MOSFETs. Both transistors have extremely low input capacitance and high gain-bandwidth product, which makes them ideal for providing a high level of resolution and accuracy.

The amplifier’s output stage consists of an inductively-coupled pair of high-current MOSFETs. This combination is designed to deliver a high output swing with low distortion and low noise. The two transistors share one single power supply and are connected to the amplifier’s output such that they work in push-pull configuration.

The INA2180A3IDGKR can be used in a variety of application domains, including instrumentation, operational amplifiers, buffer amplifiers and many more. It was designed with low noise, low-input bias and low distortion in mind, and has a wide bandwidth from 5 kHz to 400 kHz. It has a single ended output, and operates over a temperature range of -40C to 85C. It operates over a range of supplies from 2.5V to 32V, and is contained in an 8-pin SOIC-N package.

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