IR2112-1PBF

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The IR2112-1PBF is part of the integrated gate driver family from International Rectifier. It is part of a power management integrated circuit (PMIC) and is specifically designed to drive various types of power semiconductor devices such as insulated gate bipolar transistors (IGBTs) and MOSFETs. This integrated gate driver combines an isolated gate driver, an input regulator and a bootstrap diode in a single package, reducing the power loss and size of the system. It has an onboard shunt regulator to protect the MOSFET or IGBT’s gate from overvoltage.

The IR2112-1PBF provides up to a ±28V gate drive capability at up to 6A peak and 5A continuous, without the need for an external gate drive transformer. It features an isolated input to reduce noise and the possibility of device co-installation. This device also features a power shutoff option and low voltage lockout to protect the system from damaging ground faults.

Application Field

The IR2112-1PBF can be used in a variety of applications such as uninterruptible power supplies, motor drives, power switches and motor control circuits. It is also suitable for use in hot swap applications. This device is also ideal for use in high side and low side gate drivers, providing a low voltage, high current solution. It is also useful in applications with inductive loads, as the shunt regulator helps to protect the gate from potential damage during switching transitions.

Working Principle

The IR2112-1PBF is a 3-pin integrated gate driver, consisting of a power input, an enable input, and a shutdown input. At the power input, a voltage is supplied to the enable pin and the shutdown pin, to enable and control the device. The enable pin also supports a logic control enable, allowing the device to be turned on or off, based on a logic control signal. The shutdown pin provides for a power shutoff option in the event of a ground fault.

Once enabled, the IR2112-1PBF then provides a high voltage, high current gate drive to the connected MOSFET or IGBT gate. The device also features a bootstrap diode and shunt regulator to protect the gate from overvoltage and from damage from inductive loads. The device also features an optional low voltage cutoff, which will automatically shutoff the device in the event of a power failure or low voltage condition.

In summary, the IR2112-1PBF is an ideal integrated gate driver for providing a high voltage, high current gate drive to MOSFET or IGBT gates in various applications. Its low voltage lockout feature provides protection from low voltage and ground fault conditions, while the onboard shunt regulator helps to protect the gate from overvoltage and from damage from inductive loads. The onboard enable and shutdown features also allow the device to be turned on or off quickly, based on a logic control signal.

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