Allicdata Part #: | IR21364JTRPBFTR-ND |
Manufacturer Part#: |
IR21364JTRPBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER BRIDGE 3PHASE 44-PLCC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 44-PLCC, ... |
DataSheet: | IR21364JTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Peak Output (Source, Sink): | 200mA, 350mA |
Base Part Number: | IR21364JPBF |
Supplier Device Package: | 44-PLCC, 32 Leads (16.58x16.58) |
Package / Case: | 44-LCC (J-Lead), 32 Leads |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 125ns, 50ns |
High Side Voltage - Max (Bootstrap): | 600V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2.5V |
Voltage - Supply: | 11.5 V ~ 20 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 6 |
Channel Type: | 3-Phase |
Driven Configuration: | Half-Bridge |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PMIC – Gate Drivers are the necessary peripheral circuitry for excellent gate driver performance, enabling superior switching performance over conventional high and low side gate drivers. IR21364JTRPBF functional block diagram and applications showcase how this device can aid significantly in improving analog and digital power circuit design.
The IR21364JTRPBF device is a high-side MOSFET/low-side MOSFET power stage drive solution for both analog and digital power supplies. The IR21364JTRPBF is the industry’s first gate drive optimized for highly efficient half-bridge topologies without the need for additional external components. The device incorporates an internal gate driver, enabling a highly efficient power stage design with faster switching time compared to a standard MOSFET gate driver.
Featuring high-side/low-side drivers composed of power MOSFETs and level shifters, the IR21364JTRPBF is an advanced, low-side/high-side driver designed to drive a half-bridge topology. Its innovative internal architecture optimizes for robust performance, high speed control, and fast switching of power MOSFETs and level shifters, providing the highest possible speed switching performance.
The tightly integrated, low-side/high-side driver design delivers the highest possible switched power efficiency and the fastest switching of any automotive grade, half-bridge topology gate driver. The IR21364JTRPBF is a high-voltage, low-power device that incorporates an optimized power stage design and operation. In addition, the device is designed to offer the smallest form factor of any similar gate driver on the market.
The IR21364JTRPBF’s fast switching combined with its low quiescent current, small operational area, and low EMI makes it ideal for automotive, industrial, medical, and portable applications. This device provides a programmable turn-on/turn-off duration, which helps reduce system EMI, provide transient protection, and IP related safety. The device provides excellent thermal performance and is rated for up to 40V operation, making it suitable for harsh automotive environments.
To understand the IR21364JTRPBF working principle, it is important to understand the concept of gate drivers and the role they play in power supplies. A gate driver is a circuit designed to convert small voltage level signals used to control a power switch such as a MOSFET into higher voltage levels used to drive the switch. It can also be used to provide level shifting of control signals. The gate driver’s output voltage level and current capacity should match the power switch.
The IR21364JTRPBF gate driver offers a gate driver to drive both Low-side and High-side MOSFETs. This eliminates the need for an external level shifter circuit to drive the gate of a Hi-side power MOSFET, and is one of the key features of this device. The IR21364JTRPBF gate driver also offers a programmable rise and fall time, allowing designers to optimize the system\'s EMI performance as well as maximizing efficiency. This feature is essential for power supplies that require a high level of EMI suppression. Additionally, the device can be programme to automatically reduce the rise and fall time when the MOSFET switch is going from On to OFF state, reducing the reverse current flow in the system, leading to higher efficiency.
The IR21364JTRPBF boasts several advanced features that make it suitable for a wide range of applications, such as automotive, industrial, medical, and portable applications. Its fast switching and low quiescent current coupled with a programmable turn-on/turn-off duration allows it to provide an improved and efficient power supply design. It also features advanced on-board features like thermal protection, Under Voltage Lockout (UVLO), adjustable dead time, and fault propagation control, allowing designers to have an easy time while prototyping and implementing power supplies using advanced components.
Overall, the IR21364JTRPBF device provides a high-performance, multi-faceted gate driver solution for advanced power supply designs and is suitable for use in a wide range of applications. Providing excellent thermal performance, high-side/low-side driver construction, and full-bridge topology optimized architecture, the IR21364JTRPBF is a reliable, versatile, and efficient gate driver solution.
The specific data is subject to PDF, and the above content is for reference
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