IR21531STRPBF

Rise / Fall Time (Typ):	80ns, 45ns
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	IR21531SPBF
Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Driven Configuration:	Half-Bridge
Channel Type:	Synchronous
Number of Drivers:	2
Gate Type:	N-Channel MOSFET
Voltage - Supply:	10 V ~ 15.6 V
Logic Voltage - VIL, VIH:	--
Current - Peak Output (Source, Sink):	--
Input Type:	RC Input Circuit
High Side Voltage - Max (Bootstrap):	600V

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IR21531STRPBF Application Field and Working Principle

The IR21531STRPBF is a device in the PMIC - Gate Drivers category, and it is designed to act as a switch in various different electronics applications. It is highly versatile and can be used in various configurations. The IR21531STRPBF is a high-speed, high-performance MOSFET gate driver, which can drive MOSFETs in either low-side or high-side configurations with low operating power. The IR21531STRPBF is a modern device, and it offers several advantages over traditional gate drivers such as improved efficiency, lower current consumption, shorter switching times, better thermal performance.A MOSFET is an important device in the context of power electronics, and a gate driver is necessary for driving the MOSFET properly. In essence, a gate driver is an integrated circuit that is designed to boost the voltage of the gate of a field-effect transistor (FET), enabling it to switch. Gate drivers are essential for providing fast switching times for the FET, enabling higher power transfer and faster power electronic applications.The IR21531STRPBF gate driver is specifically designed for driving MOSFETs, both low-side and high-side. It is suitable for applications such as motor drives, switching power supplies, and DC-DC converters. The gate driver is baised on a full bridge and floating low-side MOSFET topology, with an internal gate driver. It is optimized to support both low- and high-side MOSFETs with a wide voltage range of 2.5 to 14V.The IR21531STRPBF is equipped with a wide swath of features and capabilities, the most important being its low operating power, faster switching times, zero voltage switching delay, and reduced higher-order harmonics. It is also capable of operating in temperature ranges between -40 to 85 ˚C and it is available in both MSOP-6 and SOIC-14 packages.The working principle of the IR21531STRPBF gate driver is straightforward; it supplies a gate source and sink current to the MOSFET, allowing it to switch quickly and efficiently at low power. As is the case with all FETs, the source and drain are the two terminals of the FET. When a gate voltage is applied, it causes a change in the conductivity of the FET, enabling it to conduct or block current flow. The gate voltage supplied by the IR21531STRPBF turns on or off the current flow through the FET by varying the gate charge. The gate driver supplies the voltage to the gate at the right level, independent of the supply voltage, in order to trigger the FET quickly and reliably.In addition to driving the FET, the IR21531STRPBF also includes several features that reduce undesirable switching artefacts and losses. When the device is operating in the high side configuration, it can maintain the charge on the FET gate during the turn-off while discharging the FET gate voltage to ground. Furthermore, the device can reduce ringing in the output of the circuit with its unique dead time generator feature. The low operating power of the device and its fast switching times make it a particularly attractive option for applications that require high power transfer.Overall, the IR21531STRPBF is a versatile device and is ideal for applications such as motor control, power supplies and DC-DC converters. Its high performance and low power consumption make it a great choice for applications where efficiency and low switching artefacts are important. With its wide range of features and capabilities, the IR21531STRPBF is sure to meet the needs of a wide range of applications.

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