IR35221MTRPBF

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IR35221MTRPBF is a 3-phase high-side controller IC with integrated MOSFETs. It is ideal for general purpose applications such as motor control, LED driver, DC-DC converter, and AC-DC converter. With its high current capability and integrated MOSFETs, IR35221MTRPBF can operate in applications that require high current, high efficiency and high power.

The device consists of three high-side PWM drivers and three integrated low-side MOSFET which is optimized for current-mode operation, as well as gate drivers. The gate drivers allow logic-level shift and provide fast startup time. The PWM drivers provide fast rise and fall times, while the integrated low-side MOSFETs reduce total part count and simplify the circuit design.

IR35221MTRPBF offers many benefits that make it an ideal choice for power management applications. The wide operating temperature range of −40°C to +125°C, fast rise and fall times, low EMI, and low output leakage current provide highly reliable operation in a wide range of environmental conditions.

IR35221MTRPBF can be easily implemented across different topologies such as half-bridge, full-bridge, boost and buck-boost. The wide input voltage range of 4.5 V to 40 V makes it suitable for many different applications. The device is optimized for current-mode operation, and it provides protection against over-voltage, under-voltage and overtemperature.

IR35221MTRPBF integrates a variety of features that enable it to deliver high performance with minimal external components. The embedded bootstrap diode eliminates the need for external components. The integrated gate drivers provide fast drive time, while the low-side MOSFETs ensure high efficiency and low noise. The device also features protections against ESD, over-voltage, under-voltage and overtemperature, making it an ideal choice for high-reliability applications.

Overall, IR35221MTRPBF is an ideal choice for power management applications such as motor control, LED driver, DC-DC converter, and AC-DC converter. Its wide operating temperature range of -40°C to +125°C, fast rise and fall times, low EMI and low output leakage current make it highly reliable in a wide range of environmental conditions. Additionally, its integrated gate drivers, bootstrap diode, and protections against over-voltage, under-voltage and overtemperature make it an easy to use solution for a variety of power management applications.

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