IRSF3010S Allicdata Electronics
Allicdata Part #:

IRSF3010S-ND

Manufacturer Part#:

IRSF3010S

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC FET SMART SW 50V 11A D2PAK
More Detail: N/A
DataSheet: IRSF3010S datasheetIRSF3010S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Rds On (Typ): 53 mOhm
Input Type: Non-Inverting
Features: --
Fault Protection: Over Temperature, Over Voltage
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Base Part Number: IRSF3010S
Series: --
Packaging: Tube 
Part Status: Obsolete
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Description

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IRSF3010S is a P-Channel MOSFET. It is short for Power Distribution Switches, Load Drivers, and is suitable for automotive, industrial and consumer applications. The product is offered in a 3-pin SO-8 package, allowing for flexible layout within the device housing. It has a low RDS(on) and an ultra-low Qrr, making it suitable for systems requiring very low power dissipation. The device has a maximum voltage rating of 30V and a maximum current of 2.5A, making it suitable for a wide range of applications.

The main characteristic of the IRSF3010S is its power management capabilities. It is designed to provide automatic control and regulation of power distribution in a system by utilizing closed loop monitoring and regulation. This enables the device to provide power control with very high accuracy and efficiency, while reducing the overall system power consumption and noise. Additionally, the device can be programmed to provide over-current and over-temperature protection, making it suitable for use in a wide range of applications.

The working principle of IRSF3010S is based on MOSFETs. This type of device operates on a voltage signal and is capable of providing a high speed switching action. The device is made up of four MOSFETs, a dielectric layer and a gate drive circuit. The four MOSFETs are connected in parallel to provide the voltage signal that is applied to the drain. When the voltage signal is switched, the gate drive circuit sends a gate voltage to the gate which turns the MOSFET on or off. This allows the device to provide very fast switching speeds and is often used to provide pulse width modulation control.

The IRSF3010S can be used in a variety of applications. It is often used in automotive applications, such as power distribution and control, as well as in industrial applications, such as motor control. It is also suitable for consumer applications, such as lighting, home automation and power supply control. The device is also capable of providing fast switching speeds and is often used to provide pulse width modulation control.

In summary, the IRSF3010S is a P-Channel MOSFET which is suitable for automotive, industrial and consumer applications. It is capable of providing power management and control with very high accuracy and efficiency, while reducing the overall system power consumption and noise. The device is made up of four MOSFETs, a dielectric layer and a gate drive circuit, and is capable of providing fast switching speeds and pulse width modulation control. It is suitable for a wide range of applications and is often used in automotive, industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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