IS25LQ080B-JNLE-TR Integrated Circuits (ICs)

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The IS25LQ080B-JNLE-TR is a memory from the IS25 series, designed by Integrated Silicon Solution, Inc. (ISSI). It is a NOR non-volatile memory that combines fast read access times with good reliability and power efficiency. The IS25LQ080B-JNLE-TR consists of 8,192K bits organized into 1,024K words of 8 bits each. It is available in a 8-Pin SOIC package and can be used in systems that require robust, low power storage solutions.

IS25LQ080B-JNLE-TR Application Field

The IS25LQ080B-JNLE-TR is ideal for applications where high performance NOR flash memory is required. These applications include embedded systems, portable electronics, automotive electronics, industrial systems and medical systems. The 8-Pin SOIC package allows for easy integration into existing systems. It is also compatible with most major microcontroller architectures, making it a versatile solution for a wide range of applications.

The IS25LQ080B-JNLE-TR is also suitable for applications that require a low power storage solution. The virtual AND gate enables high-speed programming, allowing data to be stored quickly and reliably. The fast read access time of 20ns helps to reduce power consumption by limiting overall system response time. The low power feature also makes the IS25LQ080B-JNLE-TR suitable for applications with stringent power budget requirements such as battery powered devices.

IS25LQ080B-JNLE-TR Working Principle

The IS25LQ080B-JNLE-TR is a single-voltage polarization, high-density NOR flash memory device. The memory cell array consists of an array of 8,192K bits organized into 1,024K words of 8 bits each. The memory is accessed through three I/O ports: Address, Data and Control.

In order to perform write operations, the program operation is initiated by asserting the CE signal, followed by the VDDON signal. Data is then written to the memory array by applying the data and address signals in the proper sequence, followed by the PROG signal. The IS25LQ080B-JNLE-TR also includes a built-in virtual AND gate which ensures that the data is written correctly in all cases.

In order to perform a read operation, the CE, VDDELS, and OE signals must be asserted to enable the output buffer, followed by the address lines. Data is then clocked out of the memory array by applying the clock signal and the address lines. The IS25LQ080B-JNLE-TR also supports a Read ID command which is used to identify the specific device.

The IS25LQ080B-JNLE-TR supports a wide range of programming and erase functions and requires a single +3.3V power supply. It also includes an internal program-erase controller, and supports four sector erase, 32 row erase, and sector protection functions. The device also includes an ECC (Error Code Correction) device which helps to improve the reliability and robustness of the device.

The IS25LQ080B-JNLE-TR is a robust and low power memory solution ideal for embedded systems, portable electronics, automotive electronics, industrial systems, and medical systems. It includes fast read access times, good reliability, and a wide range of programming and erase functions. The device is also easy to integrate into existing systems due to its 8-Pin SOIC package and is compatible with most major microcontroller architectures.

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