IS25LQ512B-JNLE-TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IS25LQ512B-JNLE-TR is a parallel NOR Flash Memory device. It is a member of the IS25LQ Series of NOR Flash devices and is designed to be a low-power, cost-effective memory device for embedded and system applications. This device is available in densities of 512 kbit (64 KB) and is optimized for 3V and 5V operations. It has a wide industrial temperature range from -40°C to +85°C. It also features a low-power serial peripheral interface (SPI). This article examines the application field and working principle of the IS25LQ512B-JNLE-TR memory device.

As a cost-effective embedded and system application memory device, the IS25LQ512B-JNLE-TR is designed for use in a wide range of applications, including automotive, consumer electronics, industrial, medical and military embedded systems. Some of the applications include automotive body control, instrument cluster, gaming systems, PDAs and digital still cameras, set-top boxes, portable navigation systems and an array of smart home devices. It is also commonly used in industrial automation, data logging, internet of things (IoT) applications, security/surveillance and medical devices for data storage and program code storage.

The IS25LQ512B-JNLE-TR memory device utilizes MirrorBit Quad NOR Flash technology. It features 16 individual erase functions, which allow for field and block-level (sector) erasing. In addition, it supports the default read mode, higher speed read mode, hardware reset and hardware programming support, permitting it to rapidly and reliably program while in-system. This Memory device is a non-volatile memory and has an unlimited write erase cycle with data retention of more than 20 years.

The IS25LQ512B-JNLE-TR memory device has a flexible interface, which makes it ideal for embedded applications. The interface is a 24-pin 120-mil SOIC (8x20 mil) package and is fully compatible with a standard SPI interface. This allows it to be programmed and erased using a standard SPI protocol. The interface features a 24-bit-wide synchronous data bus and is compatible with 3VV logic levels. It also supports a 16-bit wide address bus that supports up to 64-kb addressing range.

The IS25LQ512B-JNLE-TR memory device features advanced features designed to protect the integrity and security of data stored in the chip. These features include a write protection feature for standard and block write operations, two levels of password protection, a four-wire write protect, and an optional defect states table for improved data reliability. Additionally, the IS25LQ512B-JNLE-TR offers built-in ESD and electrical overstress protection that can protect the chip from damages caused by electrostatic discharge.

The IS25LQ512B-JNLE-TR memory device is a powerful and cost-effective device for embedded and system applications. It is designed to be low-power and provides robust security features. It is also a highly compatible device with a wide range of applications. With its 16-bit address bus, up to 64 KB of data can be stored, and its reliable write-erase cycle and data retention make it the ideal embedded memory solution.

The specific data is subject to PDF, and the above content is for reference