IS29GL01GS-11DHV01 Allicdata Electronics
Allicdata Part #:

IS29GL01GS-11DHV01-ND

Manufacturer Part#:

IS29GL01GS-11DHV01

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 1G PARALLEL
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 110...
DataSheet: IS29GL01GS-11DHV01 datasheetIS29GL01GS-11DHV01 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: GL-S
Part Status: Preliminary
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory is one of the most important components that make up the hardware of a computer. Without memory, a computer would not be able to process input and output information. There are many different types of memory available, such as IS29GL01GS-11DHV01, which are designed for specific applications. This article examines the application field and working principle of the IS29GL01GS-11DHV01 memory.

The IS29GL01GS-11DHV01 memory is a type of synchronous static random-access memory (SSRAM) used mainly in embedded systems. It is designed to provide fast access times of 0.45 nanoseconds when running at four-cycle commands at 166MHz. It features non-volatile memory, offset address switching and maximum data signal rate of 166MHz, making it ideal for embedded systems that require fast data access and signal processing.

IS29GL01GS-11DHV01 memory has a wide range of applications, such as PCs, servers, routers, notebooks, scanners, digital cameras and automotive systems. It is also often used in robotics and networking applications, as it provides a higher level of memory performance than traditional DRAM memory. The memory is often used in mission-critical applications where reliability and low power consumption are essential, such as in medical and industrial automation.

The working principle of IS29GL01GS-11DHV01 memory is based on addressing. Each bit of memory is identified using a unique address, which is then used to access the memory cell. The address is a combination of a row address and a column address. This is known as the row-column addressing system. The memory is arranged in blocks of words, where each word is composed of 8 bits of data. The addresses are sequentially stored in the memory cells, allowing for rapid access to the stored data. When the desired memory address is accessed, the stored data can be retrieved in an instant.

IS29GL01GS-11DHV01 memory also offers reliable storage and a higher level of signal integrity. The memory is protected from accidental erasure by an Error Checking and Correction (ECC) circuit, which helps to ensure that data is not corrupted during transfer. This memory also allows for thermal and self-timed operations, providing more options for data access and control.

In conclusion, IS29GL01GS-11DHV01 memory is an ideal choice for embedded systems and other mission-critical applications. It provides high levels of performance, reliability and low power consumption, while offering excellent signal integrity. The memory is also easy to install and use, providing a viable solution for any application.

The specific data is subject to PDF, and the above content is for reference

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