IS29GL256S-10DHB010

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Modern integrated circuit technology has enabled breakthroughs in many areas, particularly in the development of memories. In this article, the IS29GL256S-10DHB010 will be discussed with regards to its application field and working principle. This particular device is an Small Outline Dual In-line Memory Module (SODIMM) - a type of Random Access Memory (RAM).

Application Field

The IS29GL256S-10DHB010 is a type of SODIMM, a commonly-used RAM. It is a high-speed, low-power memory device intended for use in many applications, such as embedded systems, automotive information systems, multimedia equipment, and other user interface applications. It is most often used in portable devices such as laptops, where its low power consumption and small form factor are beneficial. This device is also particularly suitable for applications that make use of modern high-speed microprocessors, such as PCs, game consoles, and communication equipment. Additionally, the IS29GL256S-10DHB010 is capable of operating at high temperatures, making it suitable for industrial applications.

Working Principle

The IS29GL256S-10DHB010 is a SODIMM device composed of dynamic RAM (DRAM) integrated circuits (ICs). DRAM is a type of non-volatile memory that stores data in electrical charges. The IS29GL256S-10DHB010 operating voltage is 3.3 V, which makes it suitable for many popular applications that require lower power supply. It consists of two 16Mx8 arrays of 256Mb, which makes a total of 512Mb (64MB). Each memory cell in the array contains one transistor and one capacitor, and the capacity of each cell is determined by the amount of charge stored in the capacitor. When data is written to the cell, the capacitor is charged, and when data is read from the cell, the capacitor is discharged. This allows the device to quickly access and store data.

Conclusion

The IS29GL256S-10DHB010 is a type of SODIMM DRAM device that is suitable for a variety of applications. It is most often used in portable devices such as laptops, where its low power consumption and small form factor are beneficial. Additionally, the device is capable of operating at high temperatures, making it suitable for industrial applications. The device consists of two 16Mx8 arrays of 256Mb, which makes a total of 512Mb (64MB). Each memory cell stores data in electrical charges, and the device is capable of quickly accessing and storing data due to its 3.3 V operating voltage.

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