IS46LR32160B-6BLA1

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR
Memory Size:	512Mb (16M x 32)
Clock Frequency:	166MHz
Write Cycle Time - Word, Page:	12ns
Access Time:	5.5ns
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	90-TFBGA
Supplier Device Package:	90-TFBGA (8x13)

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Memory is the collection of components in a computing device that are used to store data and instructions. It is one of the most important components of any computer system and, as a result, can have significant impacts on the performance of a system. An important part of memory is the IS46LR32160B-6BLA1, a type of DRAM (dynamic random access memory) that is used for multiple applications.The IS46LR32160B-6BLA1 is a high-performance type of DRAM designed to meet specific requirements. It is capable of achieving high speeds and low power consumption while providing a wide range of functions. It is a 16 Megabit IC that is organized as 2,048 rows and 64 columns. It is implemented in an advanced CMOS process with an integrated Screening Separator Processor (SSP) interface.The IS46LR32160B-6BLA1 is used in a variety of applications, such as automotive, consumer electronics, industrial automation and military applications. It is specifically designed to meet the requirements of these applications by providing a single solution that is capable of achieving multiple functions. The high-speed operation and low power consumption are beneficial for applications that require high speeds, such as many of the automotive applications. It is also a suitable choice for consumer electronics and industrial automation due to its wide range of features and its ability to operate reliably. In addition, it is suitable for military applications due to the fact that it is designed with an SSP interface, which provides an additional layer of security.The working principle of the IS46LR32160B-6BLA1 is based on the fact that it is a type of DRAM. DRAM is a type of Random-Access Memory (RAM) which operates by storing information in a multi-level cell structure, consisting of capacitors and transistors. In order to read or write data to the DRAM, a series of row and column addresses are accessed. The row address is first accessed and then the data is written or read from the row. Once the data is read or written, the column address is then accessed, allowing for further accesses to the data. The process is then repeated until all the data is read or written.In order to increase performance, the IS46LR32160B-6BLA1 is designed with an SSP interface. This interface allows the DRAM to be programmed with certain commands which can help optimize performance and reduce power consumption. An example of such a command is the “burst mode”, which allows the DRAM to access data at high speeds, significantly increasing performance.In conclusion, the IS46LR32160B-6BLA1 is a high-performance DRAM that is used for a variety of applications, such as automotive, consumer electronics, industrial automation and military applications. It is designed with an SSP interface which helps to optimize performance and reduce power consumption. Its working principle is based on the fact that it is a type of DRAM and it operates by accessing row and column addresses in order to read or write data.

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