ISL55011IEZ-T7 Allicdata Electronics
Allicdata Part #:

ISL55011IEZ-T7-ND

Manufacturer Part#:

ISL55011IEZ-T7

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Intersil
Short Description: IC AMP MMIC BIPO BROADBND SC70-6
More Detail: RF Amplifier IC Bluetooth 500MHz ~ 3GHz
DataSheet: ISL55011IEZ-T7 datasheetISL55011IEZ-T7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Frequency: 500MHz ~ 3GHz
P1dB: 14.4dBm
Gain: 15.4dB
Noise Figure: 3.9dB
RF Type: Bluetooth
Voltage - Supply: 3.3V
Current - Supply: 14mA
Test Frequency: 1GHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Description

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The ISL55011IEZ-T7 is a dielectric resonator oscillator-based RF amplifier used in RF communication systems. Dielectric resonator oscillator-based RF amplifiers have been commonly used in such systems due to their superior precision and reliability compared to wire-based amplifiers.

The ISL55011IEZ-T7 is designed for use in high frequency (2.4–7 GHz) communications. It uses a non-volatile, single-chip dielectric resonator oscillator (DRO) developed and patented by Intersil. It is designed to operate at a nominal supply voltage of +3.3V and a maximum supply voltage of +3.6V.

The ISL55011IEZ-T7 is based on Intersil\'s patented I-DRO (Integrated Dielectric Resonator Oscillator) technology, which enables the oscillator to achieve high frequency stability and low noise performance. The device is also designed to optimize output power and has the capability to tune in-band noise at high frequencies. The installed loop filter eliminates feedback loops and helps reduce the risk of harmonic distortion in the output signal. The dielectric resonator oscillator is made up of a ceramic enclosure containing a dielectric resonator, a quartz or piezoelectric crystal resonator, and two capacitor plates.

The DRO is connected to an amplifier, usually a differential amplifier, which is used to drive the antenna. At the output of the amplifier, a high frequency signal is created by combining the signal from the DRO and the amplifier. This signal is then amplified further by the amplifier to produce the desired output power. The DRO also provides the bias voltage and current required for the amplifier, which is dependent on the amplifier\'s specifications.

The ISL55011IEZ-T7 is a high-performance RF amplifier suitable for use in a variety of communication systems such as GSM, CDMA, WCDMA, and LTE. It features excellent transient response, high linearity, and low noise performance which make it ideal for use in such systems. It is also designed for use in direct high frequency RF power transmission, in which the RF signal is amplified, converted to DC power, and then sent through a transmission line.

The ISL55011IEZ-T7 is ideal for use in low-power or long-distance communication systems. Its low noise floor makes it suitable for use in systems where signal-to-noise ratio is critical. In addition, its wide operating temperature (0°C to 70°C) makes it suitable for use in outdoor applications.

The ISL55011IEZ-T7 is a high-performance RF amplifier designed for use in a variety of communication systems. Its dielectric resonator oscillator-based architecture enables it to achieve superior performance and reliability compared to wire-based amplifiers. Its excellent transient response, high linearity, and low noise performance make it suitable for use in both low-power and long-distance communication. It is also designed for direct high frequency RF power transmission and is ideal for applications that require low noise performance.

The specific data is subject to PDF, and the above content is for reference

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