ISL55012IEZ-T7 RF/IF and RFID |
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Allicdata Part #: | ISL55012IEZ-T7DKR-ND |
Manufacturer Part#: |
ISL55012IEZ-T7 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Intersil |
Short Description: | IC AMP MMIC BIPO BROADBND SC70-6 |
More Detail: | RF Amplifier IC Bluetooth 500MHz ~ 3GHz SC-70-6 |
DataSheet: | ISL55012IEZ-T7 Datasheet/PDF |
Quantity: | 3420 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 2 (1 Year) |
Series: | -- |
Packaging: | Digi-Reel® |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Frequency: | 500MHz ~ 3GHz |
P1dB: | 17.7dBm |
Gain: | 18.3dB |
Noise Figure: | 4.7dB |
RF Type: | Bluetooth |
Voltage - Supply: | 3 V ~ 5.5 V |
Current - Supply: | 63.5mA |
Test Frequency: | 1GHz |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF amplifiers are an important part of the modern communications infrastructure. The ISL55012IEZ-T7 RF amplifier is a high performance, low power, broadband amplifier for use in radio systems. It is designed to provide a wide range of frequency responses and signal gains, providing the ability to amplify signals from the GHz to tens of GHz range.
The ISL55012IEZ-T7 has an integrated power amplifier and transistor combination that allows for a wide amplifier bandwidth. Its small physical size and range of voltage ranges also make it compatible with a variety of circuits and designs. The transistor enhances linearity and harmonic content with low noise and low current consumption. The device has a gain control pin, allowing the user to adjust the gain of the amplifier. The power supply range is 5V, 8V, and 12V.
This device has a number of applications, including wideband radio and telecommunications systems. It can be used in base station amplifiers, distributed antenna systems, and point-to-point microwave, satellite, and radio links. It can also be used in medical imaging systems, scientific data acquisition, and instrumentation systems.
The ISL55012IEZ-T7 has two different types of working principles. The first is the bipolar junction transistor and the second is the field-effect transistor. The bipolar junction transistor (BJT) operates using current flows from emitter to collector and is therefore best suited for amplifying weak signals. The field effect transistor (FET) has current flow between source and drain and is therefore better suited for amplifying stronger signals. In both working principles, the device is capable of handling signal gains of up to six hundred milliwatts.
The ISL55012IEZ-T7 is an ideal device for versatile high performance amplifiers. With its wide frequency response, durable construction, and low power consumption, it provides a reliable signal for a variety of applications. Its small size and range of voltage ranges also make it ideal for a variety of designs. The device also features a gain control pin, allowing users to easily adjust the gain of the amplifier. Furthermore, the ISL55012IEZ-T7 provides high linearity and harmonic content with low noise and low current consumption.
The specific data is subject to PDF, and the above content is for reference
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