ISL6605CBZA Allicdata Electronics
Allicdata Part #:

ISL6605CBZA-ND

Manufacturer Part#:

ISL6605CBZA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC BUCK 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: ISL6605CBZA datasheetISL6605CBZA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 2A, 2A
Base Part Number: ISL6605
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 8ns, 8ns
High Side Voltage - Max (Bootstrap): 33V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 1V, 2V
Voltage - Supply: 4.5 V ~ 5.5 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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ISL6605CBZA Application Field and Working Principle

The ISL6605CBZA is an integrated gate driver IC that is used to drive small- and medium-voltage power MOSFETs, IGBTs, and other power switching devices in a wide range of consumer and industrial applications. This advanced power stage device is capable of driving both N- and P-channel devices simultaneously from a single supply. It has been optimized to provide high-speed switching, low current consumption and low thermal dissipation, making it an excellent choice for applications where efficiency, cost, and size are critical.

The ISL6605CBZA is flexible and can be adapted to the various needs of the system in which it is used. The device integrates a low-impedance, low-noise gate drive output with a built-in safety function to prevent both shoot-through and overvoltage damage to the power MOSFETs/IGBTs. The device features a dynamic undervoltage lockout (UVLO) that prevents the device from operating when the supply voltage is too low. Protection against reverse-battery conditions is also built in.

The ISL6605CBZA is designed to drive both N- and P-channel power MOSFETs/IGBTs up to 500V. The device has integrated gate drive outputs for both the P-channel and N-channel devices that can provide up to 5A peak sourcing current and 10A peak sinking current. The gate drives are actively matched for both EMI and dynamic performance. The input control signals for the P-channel and N-channel devices can be independently programmed for toggle, pulse, or PWM-drive modes. This device is capable of operating from a single supply from 7V to 24V, and can also be operated from split supplies for higher-voltage operation.

The working principle of the ISL6605CBZA is very simple. When the device is activated, it generates an output drive signal on its gate drive outputs which is used to control the gate voltage of an attached power MOSFET/IGBT. The device is designed to maintain the proper gate voltage based on the status of the power MOSFET/IGBT, ensuring that the device is properly operated and the system remains in a safe operating range. The device also ensures that it only switches the power MOSFET/IGBT when the voltage is low enough that the device will not be damaged.

In addition to providing an output gate drive, the ISL6605CBZA also provides protection. It includes a dynamic UVLO that prevents the device from being operated if the input voltage is too low. It also has integrated short-circuit protection to protect the device from being over-driven and a reverse-battery protection feature to prevent damage from reverse-battery conditions.

The ISL6605CBZA is a very versatile, high-performance gate driver IC that is suitable for a wide range of consumer and industrial applications. Its small size, low current consumption, and built-in safety features make it a great choice for applications where efficiency, cost, and size are critical.

The specific data is subject to PDF, and the above content is for reference

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