ISL6613BCR Allicdata Electronics
Allicdata Part #:

ISL6613BCR-ND

Manufacturer Part#:

ISL6613BCR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC MOSFET DRVR SYNC BUCK 10-DFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 10-DFN (3...
DataSheet: ISL6613BCR datasheetISL6613BCR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 1.25A, 2A
Base Part Number: ISL6613B
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 26ns, 18ns
High Side Voltage - Max (Bootstrap): 36V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 7 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tube 
Description

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ISL6613BCR is a Low Input-Current Fault-Protected Gate Driver designed for driving N-channel MOSFETs. Various features make it ideal for applications such as Power Factor Correction (PFC), Source Side Synchronous Rectification (SSSR), low power switching applications, as well as boost or buck converters. It supports high-side and low-side N-channel MOSFETs.

ISL6613BCR has a wide input common mode voltage range of -1.2V to 20V, which enables its use in high voltage applications. It has an adjustable slew restrain function that enables it to reduce EMI noise without additional components. It can operate in temperatures ranging from -40 to +125 degrees Celsius.

The ISL6613BCR has two main fault protection features. The first is the avalanche mode circuit, which senses the drain of the high-side MOSFET to detect an over voltage, or short-circuit condition. The second is the thermal protection circuit, which senses an over temperature condition and shuts off the output MOSFET. The ISL6613BCR also has an optional active device reset, which will reset the driver.

ISL6613BCR gate driver has been designed to be used in a wide variety of applications due to its high level of integration, protection features and advanced functions. It can be used for Power Factor Correction (PFC) circuits, synchronous rectification (SSSR), boost or buck DC-to-DC converters, and other low power switching applications. Thanks to its adjustable slew restrain and cooling features, the ISL6613BCR is also suitable in applications where EMI suppression is needed.

The working principle of ISL6613BCR is based on an internal charge pump, which can provide a high output voltage and enables the driver to drive an N-channel MOSFET with a high level of efficiency. The charge pump uses two capacitors and an internal reference for the generation of the high-voltage gate drive. The gate drive voltage can be adjusted using two external resistors to ensure optimal MOSFET performance. The driver also has an adjustable input current limit that prevents the gate driver from sourcing excessive inrush current, even with large gate capacitances.

In summary, the ISL6613BCR is a highly integrated, fault-protected N-channel MOSFET driver with a wide input common mode voltage range, adjustable slew restrain and overload protection. Its small size and wide range of features make it suitable for a variety of applications. Its adjustable input current limit allows it to handle large amounts of gate capacitance, while its adjustable slew restrain feature is designed to reduce EMI noise. This makes the ISL6613BCR an ideal choice for applications where fault protection, power efficiency and EMI suppression are required.

The specific data is subject to PDF, and the above content is for reference

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